PMN40UPE Fast Delivery |IC PHOENIX CO.,LIMITED

PMN40UPE ,20 V, single P-channel Trench MOSFETApplicationsRelay driver•• High-speed line driverHigh-side loadswitch•• Switching circuits1.4 Quick ..
PMN42XPE ,20 V, single P-channel Trench MOSFETApplications• Relay driverHigh-speed line driver•• High-side loadswitchSwitching circuits•1.4 Quick ..
PMN45EN ,TrenchMOS(TM) enhanced logic level FETApplications■ Battery powered motor control■ Load switch in notebook computers■ High speed switch i ..
PMN48XP ,20 V, 4.1 A P-channel Trench MOSFETApplications Relay driver High-side loadswitch High-speed line driver Switching circuits1.4 Qui ..
PMN49EN ,N-channel TrenchMOS logic level FETGeneral descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasti ..
PMN49EN ,N-channel TrenchMOS logic level FETApplicationsn Battery management n High-speed switching1.4 Quick reference datan V ≤ 30 V n I ≤ 4.6 ..
PT2211 , Infrared Remote Control Transmitter　
PT2212 , Infrared Remote Control Transmitter　　
PT2212 , Infrared Remote Control Transmitter　　
PT2215-040 , Infrared Remote Control Transmitter IC
PT2221M-001 , Infrared Remote Control Transmitter
PT2222M , Infrared Remote Control Transmitter

PMN40UPE
20 V, single P-channel Trench MOSFET
PMN40UPE
20 V, single P-channel Trench MOSFET13 August 2012 Product data sheet Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low threshold voltage• Fast switching• Trench MOSFET technology• 4 kV ESD protection
1.3 Applications Relay driver• High-speed line driver• High-side loadswitch• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - -20 V
VGS gate-source voltage
Tj = 25 °C - 8 V drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -6 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 37 43 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMN40UPE
20 V, single P-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol D drain D drain G gate S source D drain D drain 3256
TSOP6 (SOT457)
017aaa259 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMN40UPE TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 Marking
Table 4. Marking codes
Type number Marking code
PMN40UPE WD Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - -20 V
VGS gate-source voltage
Tj = 25 °C 8 V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -6 A
VGS = -4.5 V; Tamb = 25 °C [1] - -4.7 A drain current
VGS = -4.5 V; Tamb = 100 °C [1] - -3.5 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -16 A
[2] - 500 mWTamb = 25 °C
[1] - 1220 mW
Ptot total power dissipation - 8330 mW
NXP Semiconductors PMN40UPE
20 V, single P-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - -1.3 A
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 4000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[3] Measured between all pins.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as afunction of junction temperature (°C)-75 17512525 75-25
017aaa124
Ider(%)
Fig. 2. Normalized continuous drain current as afunction of junction temperature
NXP Semiconductors PMN40UPE
20 V, single P-channel Trench MOSFET
aaa-004358
-102(A)
VDS (V)-10-1 -102-10-1
tp = 1 ms
tp = 10 ms
tp = 100 ms
Limit RDSon = VDS/ID
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 6 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 216 250 K/Win free air
[2] - 83 95 K/W
Rth(j-a) thermal resistancefrom junction to
ambient in free air; t ≤ 5 s [2] - 51 60 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint 10 15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2]2.
NXP Semiconductors PMN40UPE
20 V, single P-channel Trench MOSFET
aaa-004359
tp (s)10-3 102 10310110-2 10-12
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.50.33 0.250.2
0.01 0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-004360
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.5
0.33 0.250.2 0.1
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Characteristics Max Unit - V -0.95 V -1 µA -15 µA
NXP Semiconductors PMN40UPE
20 V, single P-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - -10 µAIGSS gate leakage current
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 37 43 mΩ
VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 51 59 mΩ
VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 45 55 mΩ
RDSon drain-source on-stateresistance
VGS = -1.8 V; ID = -3 A; Tj = 25 °C - 59 72 mΩ
gfs forward transconductance VDS = -10 V; ID = -4 A; Tj = 25 °C - 15 - S
Dynamic characteristics
QG(tot) total gate charge - 15.6 23 nC
QGS gate-source charge - 2.5 - nC
QGD gate-drain charge
VDS = -10 V; ID = -4.4 A; VGS = -4.5 V;
Tj = 25 °C 2.8 - nC
Ciss input capacitance - 1820 - pF
Coss output capacitance - 207 - pF
Crss reverse transfercapacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 146 - pF
td(on) turn-on delay time - 8 - ns rise time - 21 - ns
td(off) turn-off delay time - 50 - ns fall time
VDS = -10 V; ID = -4 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C 34 - ns
Source-drain diode
VSD source-drain voltage IS = -1.2 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V
NXP Semiconductors PMN40UPE
20 V, single P-channel Trench MOSFET
aaa-004361
VDS (V)0 -3-2-1
-16(A)
VGS=-2V-4.5V
-1.8V
-1.6V
-1.4V
-3V
-2.5V
-2.2V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values
017aaa143
-10-3(A)
VGS (V)-0.2 -1.0-0.8-0.4 -0.6
(1) (3)(2)
Tj = 25 °C; VDS = -3 V
(1) minimum values(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-004362
RDSon(mΩ)
VGS=-1.4V
-4.5V
-1.8V
-1.6V -2VV-2.5V
-2.2V
VGS (V)0 -5-4-2 -3-1
aaa-004363
RDSon(mΩ)=25°C=150°C
ID = -4 A
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PMN40UPE	NXP/PH	N/a	10000	avai	20 V, single P-channel Trench MOSFET