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PMN34UP
20 V, 5 A P-channel Trench MOSFET
Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits 1.8 V RDSon rated Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Pinning information
PMN34UP
20 V, 5 A P-channel Trench MOSFET
Rev. 1 — 9 May 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj=25°C ---20 V
VGS gate-source voltage -8 - 8 V drain current VGS =-4.5V; Tamb =25°C [1] ---5 A
Static characteristicsRDSon drain-source on-state
resistance
VGS =-4.5V; ID =-2.4A; Tj=25°C - 34 40 mΩ
Table 2. Pinning information
NXP Semiconductors PMN34UP
20 V, 5 A P-channel Trench MOSFET Ordering information Marking Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 3. Ordering informationPMN34UP TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPMN34UP ZY
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - -20 V
VGS gate-source voltage -8 8 V drain current VGS =-4.5 V; Tamb =25°C [1] --5 A
VGS =-4.5 V; Tamb =100°C [1] --3.1 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -20 A
Ptot total power dissipation Tamb =25°C [2] - 540 mW
[1] - 1385 mW
Tsp=25°C - 6250 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] --1.5 A
NXP Semiconductors PMN34UP
20 V, 5 A P-channel Trench MOSFETNXP Semiconductors PMN34UP
20 V, 5 A P-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 200 230 K/W
[2] - 7890K/W
Rth(j-sp) thermal resistance
from junction to solder
point 1520K/W
NXP Semiconductors PMN34UP
20 V, 5 A P-channel Trench MOSFET Characteristics
Table 7. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =-250µA; VGS =0V; Tj=25°C -20 --V
VGSth gate-source threshold
voltage =-250µA; VDS =VGS; Tj=25°C -0.45 -0.7 -0.95 V
IDSS drain leakage current VDS =-20 V; VGS =0V; Tj=25°C ---1 µA
VDS =-20 V; VGS =0V; Tj= 150°C - - -10 µA
IGSS gate leakage current VGS =-8 V; VDS =0V; Tj=25°C - - -100 nA
RDSon drain-source on-state
resistance
VGS =-4.5V; ID =-2.4A; Tj=25°C - 34 40 mΩ
VGS =-4.5V; ID =-2.4A; Tj= 150°C - 4855mΩ
VGS =-2.5V; ID =-2.0A; Tj=25°C - 42 48 mΩ
VGS =-1.8V; ID =-1.8A; Tj=25°C - 57 66 mΩ
gfs forward
transconductance
VDS =-5V; ID =-2.4A; Tj =25°C - 13 - S
Dynamic characteristicsQG(tot) total gate charge VDS =-10 V; ID =-1A; VGS =-4.5V; =25°C 15.5 23 nC
QGS gate-source charge - 2.5 - nC
QGD gate-drain charge - 2 - nC
Ciss input capacitance VDS= -10 V; f=1 MHz; VGS =0V; =25°C 1950 - pF
Coss output capacitance - 175 - pF
Crss reverse transfer
capacitance 105 - pF
td(on) turn-on delay time VDS =-10 V; VGS =-5V; RG(ext) =6Ω; =25°C; ID =-1A
-13 - ns rise time - 21 - ns
td(off) turn-off delay time - 95 - ns fall time - 33 - ns
Source-drain diodeVSD source-drain voltage IS =-2.4A; VGS =0V; Tj =25°C - -0.75 -1 V
