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Partno	Mfg	Dc	Qty	Available	Descript
PMN34UN	NXP/PH	N/a	10000	avai	N-channel TrenchMOS ultra low level FET
PMN34UN	NXP	N/a	33000	avai	N-channel TrenchMOS ultra low level FET

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PMN34UN
N-channel TrenchMOS ultra low level FET
PMN34UN
μTrenchMOS™ ultra low level FET
Rev. 01 — 26 February 2003 Product dataM3D302 Description
N-channel enhancement mode ﬁeld-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMN34UN in SOT457 (TSOP6). Features TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package. Applications Battery-powered motor control Load switch in notebook computers High-speed switch in set top box power supplies Driver FET in DC-to-DC converters. Pinning information
Table 1: Pinning - SOT457 (TSOP6), simpliﬁed outline and symbol
1,2,5,6 drain (d)
SOT457 (TSOP6) gate (g) source (s)
MBK092Top view
MBB076
Philips Semiconductors PMN34UN
μTrenchMOS™ ultra low level FET Quick reference data Limiting values
Table 2: Quick reference data
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 30 V drain current (DC) Tsp =25 °C; VGS= 4.5V - 4.9 A
Ptot total power dissipation Tsp =25°C - 1.75 W junction temperature - 150 °C
RDSon drain-source on-state resistance VGS= 4.5 V; ID=2 A; Tj =25°C 3846mΩ
VGS= 2.5 V; ID=2 A; Tj =25°C 4554mΩ
VGS= 1.8 V; ID= 1.5 A; Tj =25°C 5477mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 30 V
VGS gate-source voltage (DC) - ±8V drain current (DC) Tsp =25 °C; VGS= 4.5V; Figure2 and3 - 4.9 A
Tsp =70 °C; VGS= 4.5V; Figure2 - 3.9 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 - 19.7 A
Ptot total power dissipation Tsp =25 °C; Figure1 - 1.75 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C - 1.45 A
Philips Semiconductors PMN34UN
μTrenchMOS™ ultra low level FET
Philips Semiconductors PMN34UN
μTrenchMOS™ ultra low level FET Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Rth(j-sp) thermal resistance from junction to solder point Figure4 --70 K/W
Philips Semiconductors PMN34UN
μTrenchMOS™ ultra low level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise speciﬁed.
Static characteristics
V(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS=0V 30 --V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 0.45 0.7 - V
IDSS drain-source leakage current VDS =24V; VGS =0V =25°C - 0.01 1.0 μA =55°C --10 μA
IGSS gate-source leakage current VGS=±8 V; VDS=0V - 10 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID =2A; Figure7 and8 - 3846mΩ
VGS= 2.5 V; ID =2A; Figure7 and8 - 4554mΩ
VGS= 1.8 V; ID= 1.5A; Figure7 and8 - 5477mΩ
Dynamic characteristics
Qg(tot) total gate charge VDD =15V; VGS= 4.5 V; ID =5A; Figure13 - 9.9 - nC
Qgs gate-source charge - 1.4 - nC
Qgd gate-drain (Miller) charge - 2.1 - nC
Ciss input capacitance VGS =0V; VDS=25 V; f=1 MHz; Figure11 - 790 - pF
Coss output capacitance - 90 - pF
Crss reverse transfer capacitance - 50 - pF
td(on) turn-on delay time VDD =15V; RD =12 Ω; VGS= 4.5 V; RG =6Ω -10 - ns rise time -12 - ns
td(off) turn-off delay time - 50 - ns fall time -10 - ns
Source-drain diode
VSD source-drain (diode forward) voltageIS= 1.7 A; VGS =0V; Figure12 - 0.73 1.2 V
Philips Semiconductors PMN34UN
μTrenchMOS™ ultra low level FET

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