PMN27XPE Fast Delivery |IC PHOENIX CO.,LIMITED

PMN27XPE ,20 V, single P-channel Trench MOSFETApplications• Relay driverHigh-speed line driver•• High-side loadswitchSwitching circuits•1.4 Quick ..
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PMN27XPE
20 V, single P-channel Trench MOSFET
PMN27XPE
20 V, single P-channel Trench MOSFET20 September 2012 Product data sheet Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Fast switching• Trench MOSFET technology• 2 kV ESD protection
1.3 Applications Relay driver• High-speed line driver• High-side loadswitch• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - -20 V
VGS gate-source voltage
Tamb = 25 °C
-12 - 12 V drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -5.7 A
Static characteristics
RDSon drain-source on-stateresistance VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 27 30 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMN27XPE
20 V, single P-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol D drain D drain G gate S source D drain D drain 3256
TSOP6 (SOT457)
017aaa259 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMN27XPE TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 Marking
Table 4. Marking codes
Type number Marking code
PMN27XPE WC Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - -20 V
VGS gate-source voltage
Tamb = 25 °C
-12 12 V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -5.7 A
VGS = -4.5 V; Tamb = 25 °C [1] - -4.4 A drain current
VGS = -4.5 V; Tamb = 100 °C [1] - -3.5 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -22 A
[2] - 530 mWTamb = 25 °C
[1] - 1250 mW
Ptot total power dissipation - 8330 mW
NXP Semiconductors PMN27XPE
20 V, single P-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - -1.3 A
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[3] Measured between all pins.(°C)-75 17512525 75-25
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Pder(%)
Fig. 1. Normalized total power dissipation as afunction of junction temperature (°C)-75 17512525 75-25
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Ider(%)
Fig. 2. Normalized continuous drain current as afunction of junction temperature
NXP Semiconductors PMN27XPE
20 V, single P-channel Trench MOSFET
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-102(A)
VDS (V)0 -102-10-1
tp = 1 ms
tp = 10 ms
tp = 100 ms
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 6 cm2
Limit RDSon = VDS/ID
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 206 237 K/W
[2] - 86 100 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air
[3] - 52 60 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint 13 15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint[2]2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 , t ≤ 5 s
NXP Semiconductors PMN27XPE
20 V, single P-channel Trench MOSFET
017aaa761
tp (s)10-3 102 10310110-2 10-12
Zth(j-a)(K/W)
duty cycle = 1
0.50.33 0.250.2
0.05 0.02
0.01 0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.50.33 0.250.2 0.1
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Characteristics Max Unit - V -1.25 V -1 µA 10 µA
NXP Semiconductors PMN27XPE
20 V, single P-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 27 30 mΩ
VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 56 64 mΩ
RDSon drain-source on-stateresistance
VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 39 44 mΩ
gfs forward
transconductance
VDS = -10 V; ID = -3 A; Tj = 25 °C - 16 - S
Dynamic characteristics
QG(tot) total gate charge - 15 22.5 nC
QGS gate-source charge - 3 - nC
QGD gate-drain charge
VDS = -10 V; ID = -3 A; VGS = -4.5 V;
Tj = 25 °C 3 - nC
Ciss input capacitance - 1770 - pF
Coss output capacitance - 254 - pF
Crss reverse transfer
capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 180 - pF
td(on) turn-on delay time - 15 - ns rise time - 22 - ns
td(off) turn-off delay time - 37 - ns fall time
VDS = -10 V; ID = -3 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C 29 - ns
Source-drain diode
VSD source-drain voltage IS = -1.3 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V
017aaa763
-24(A)
-8V -4.5V-3V
-2.5V VGS=-2.4V
-2.2V
017aaa129
VGS(V)0.0 -1.5-1.0-0.5
-10-3(A)
(2)(1) (3)
Tj = 25 °C; VDS = -3 V
(1) minimum values(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
NXP Semiconductors PMN27XPE
20 V, single P-channel Trench MOSFET
ID (A)0 -24-16-8
017aaa764
RDSon(mΩ)
VGS=-8V
-4.5VV
-2.5V
-2.4V-2.2V-2V-1.8V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values
VGS (V)0 -6-4-2
017aaa765
RDSon(mΩ)=150°C=25°C
ID = -3 A
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
VGS (V)0 -3-2-1
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-24(A) =150°C Tj=25°C
VDS > ID × RDSon
Tj (°C)-60 1801200 60
017aaa767
Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typical
values

Partno	Mfg	Dc	Qty	Available	Descript
PMN27XPE	NXP/PH	N/a	10000	avai	20 V, single P-channel Trench MOSFET