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PMN25UN
20 V, 6 A N-channel Trench MOSFET
Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Pinning information
PMN25UN
20 V, 6 A N-channel Trench MOSFET
Rev. 1 — 28 July 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj=25°C --20 V
VGS gate-source voltage -8 - 8 V drain current VGS =4.5 V; Tamb =25°C [1] --6 A
Static characteristicsRDSon drain-source on-state
resistance
VGS =4.5 V; ID =6A; Tj=25°C - 23 27 mΩ
Table 2. Pinning information
NXP Semiconductors PMN25UN
20 V, 6 A N-channel Trench MOSFET Ordering information Marking
Table 3. Ordering informationPMN25UN TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPMN25UN T6
NXP Semiconductors PMN25UN
20 V, 6 A N-channel Trench MOSFET Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - 20 V
VGS gate-source voltage -8 8 V drain current VGS =4.5 V; Tamb =25°C [1] -6 A
VGS =4.5 V; Tamb =100°C [1] -3.6 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 24 A
Ptot total power dissipation Tamb =25°C [2] - 530 mW
[1] - 1330 mW
Tsp=25°C - 6250 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] -1.3 A
NXP Semiconductors PMN25UN
20 V, 6 A N-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 204 235 K/W
[2] - 8294K/W
Rth(j-sp) thermal resistance
from junction to solder
point 1720K/W
NXP Semiconductors PMN25UN
20 V, 6 A N-channel Trench MOSFET
