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PMN22XN
30 V, single N-channel Trench MOSFET
Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Pinning information
PMN22XN
30 V, single N-channel Trench MOSFET
Rev. 1 — 19 January 2012 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj=25°C --30 V
VGS gate-source voltage -12 - 12 V drain current VGS =4.5 V; Tamb =25°C [1] --5.7 A
Static characteristicsRDSon drain-source on-state
resistance
VGS =4.5 V; ID= 5.7 A; Tj=25°C - 21 27 mΩ
Table 2. Pinning information
NXP Semiconductors PMN22XN
30 V, single N-channel Trench MOSFET Ordering information Marking Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 3. Ordering informationPMN22XN TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPMN22XN A4
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - 30 V
VGS gate-source voltage -12 12 V drain current VGS =4.5 V; Tamb =25°C [1] -5.7 A
VGS =4.5 V; Tamb =100°C [1] -3.6 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 23 A
Ptot total power dissipation Tamb =25°C [2] - 545 mW
[1] - 1390 mW
Tsp=25°C - 6250 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] -1.5 A
NXP Semiconductors PMN22XN
30 V, single N-channel Trench MOSFETNXP Semiconductors PMN22XN
30 V, single N-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 200 230 K/W
[2] - 7890K/W
Rth(j-sp) thermal resistance
from junction to solder
point 1520K/W
NXP Semiconductors PMN22XN
30 V, single N-channel Trench MOSFET Characteristics
Table 7. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj=25°C 30 --V
VGSth gate-source threshold
voltage =250 µA; VDS =VGS; Tj=25°C 0.5 1 1.5 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C --1 µA
VDS =30V; VGS =0V; Tj= 150°C --20 µA
IGSS gate leakage current VGS =12V; VDS =0V; Tj=25°C - - 100 nA
VGS =-12 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID= 5.7 A; Tj=25°C - 21 27 mΩ
VGS =4.5 V; ID= 5.7 A; Tj= 150°C - 3443mΩ
VGS =2.5 V; ID =3A; Tj=25°C - 28 37 mΩ
gfs forward
transconductance
VDS =5V; ID =3 A; Tj =25°C - 17 - S
Dynamic characteristicsQG(tot) total gate charge VDS =15V; ID =3A; VGS =4.5V; =25°C 6.4 10 nC
QGS gate-source charge - 1.6 - nC
QGD gate-drain charge - 1.1 - nC
Ciss input capacitance VDS =15V; f=1MHz; VGS =0V; =25°C 585 - pF
Coss output capacitance - 1.8 - pF
Crss reverse transfer
capacitance
-1.1 -pF
td(on) turn-on delay time VDS =15V; ID= 4.8 A; VGS =4.5V;
RG(ext) =6 Ω; Tj =25°C
-12 -ns rise time - 27 - ns
td(off) turn-off delay time - 128 - ns fall time - 68 - ns
Source-drain diodeVSD source-drain voltage IS= 1.5 A; VGS =0V; Tj=25°C - 0.75 1.2 V
