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PML260SN
N-channel TrenchMOS standard level FET
Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a
surface-mounted plastic package using TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
PML260SN
N-channel TrenchMOS standard level FET
Rev. 02 — 29 May 2006 Product data sheet Standard level threshold n Low profile and small footprint Very low thermal impedance n Low on-state resistance Primary side switching n DC-to-DC converters Portable appliances VDS≤ 200V n ID≤ 8.8A RDSon≤ 294 mΩ n QGD= 4.2 nC (typ)
Table 1. Pinning1, 2, 3 source (S)
SOT873-1 (HVSON8) gate (G)
5, 6, 7, 8 drain (D) 234 765
Transparent
top view
mbb076
Philips Semiconductors PML260SN
N-channel TrenchMOS standard level FET Ordering information Limiting values
Table 2. Ordering informationPML260SN HVSON8 plastic thermal enhanced very thin small outline package;no leads; terminals; body 3.3 × 3.3 × 0.85 mm
SOT873-1
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage 25°C≤Tj≤ 150°C - 200 V
VGS gate-source voltage - ±20 V drain current Tmb =25 °C; VGS=10 V; see Figure 2 and3 - 8.8 A
Tmb= 100 °C; VGS=10 V; see Figure2 - 5.5 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs; see Figure3 -15 A
Ptot total power dissipation Tmb =25 °C; see Figure1 -50 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source current Tmb =25°C - 8.8 A
ISM peak source current Tmb =25 °C; pulsed; tp≤10μs - 15 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID= 3.5A;= 0.05 ms; VDS≤ 200 V; RGS =50Ω;
VGS=10 V; starting at Tj =25°C
-22 mJ
Philips Semiconductors PML260SN
N-channel TrenchMOS standard level FET
Philips Semiconductors PML260SN
N-channel TrenchMOS standard level FET Thermal characteristics[1] Mounted on a printed-circuit board; verticalinstillair.
Table 4. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base see Figure4 - - 2.5 K/W
Rth(j-a) thermal resistance from junction to ambient minimum footprint [1]- 60 - K/W
Philips Semiconductors PML260SN
N-channel TrenchMOS standard level FET Characteristics
Table 5. Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 250 μA; VGS =0V =25°C 200 - - V= −55°C 178 - - V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; see Figure 9 and10 =25°C 234V= 150°C 1.2 - - V= −55°C - - 4.4 V
IDSS drain leakage current VDS= 160 V; VGS =0V =25°C --1 μA= 150°C - - 100 μA
IGSS gate leakage current VGS= ±20 V; VDS=0V - 10 100 nA gate resistance f=1 MHz - 0.6 - Ω
RDSon drain-source on-state
resistance
VGS=10 V; ID= 2.6 A; see Figure 6 and8 =25°C - 250 294 mΩ= 150°C - 550 647 mΩ
VGS =6V; ID= 2.5A - 263 309 mΩ
Dynamic characteristicsQG(tot) total gate charge ID= 2.6 A; VDS= 100 V; VGS =10V;
see Figure 11 and12 13.3 - nC
QGS gate-source charge - 2.4 - nC
QGS1 pre-VGS(th) gate-source charge - 1.15 - nC
QGS2 post-VGS(th) gate-source charge - 1.25 - nC
QGD gate-drain charge - 4.2 - nC
VGS(pl) gate-source plateau voltage - 4.2 - V
Ciss input capacitance VGS =0V; VDS=30 V; f=1 MHz;
see Figure14 657 - pF
Coss output capacitance - 74 - pF
Crss reverse transfer capacitance - 25 - pF
td(on) turn-on delay time VDS= 100 V; RL= 100 Ω;VGS =10V;= 5.6Ω -ns rise time -11 - ns
td(off) turn-off delay time - 19 - ns fall time -7 -ns
Source-drain diodeVSD source-drain voltage IS= 3.2 A; VGS=0 V; see Figure13 - 0.8 1.2 V
trr reverse recovery time IS= 3.2 A; dIS/dt= −100 A/μs; VGS =0V;= 120V 101 - ns recovered charge - 267 - nC
Philips Semiconductors PML260SN
N-channel TrenchMOS standard level FET
