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PMK30EP
P-channel TrenchMOS extremely low level FET
Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits Low conduction losses due to low
on-state resistance
1.3 Applications Battery management Load switching
1.4 Quick reference data
PMK30EP
P-channel TrenchMOS extremely low level FET
Rev. 04 — 25 October 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage 25°C≤Tj≤ 150°C - - -30 V drain current Tsp =25°C; VGS =-10V;
see Figure 1; see Figure 3
Ptot total power dissipation Tsp =25°C; see Figure 2 --6.9 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =-10 V; ID =-9.2A; =25°C; see Figure 9 1619mΩ
Dynamic characteristicsQGD gate-drain charge VGS =-10 V; ID =-9.2A;
VDS =-15 V; Tj =25 °C;
see Figure 11; see Figure 12 -nC
NXP Semiconductors PMK30EP
P-channel TrenchMOS extremely low level FET Pinning information Ordering information Limiting values
Table 2. Pinning information source
SOT96-1 (SO8) source source G gate D drain D drain D drain D drain
Table 3. Ordering informationPMK30EP SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage 25°C≤Tj≤ 150°C - -30 V
VDGR drain-gate voltage 25°C≤Tj≤ 150 °C; RGS =20kΩ --30 V
VGS gate-source voltage -20 20 V drain current Tsp =25°C; VGS= -10 V; see Figure 1;
see Figure 3 -14.9 A
Tsp =100 °C; VGS= -10 V; see Figure 1 --7.5 A
IDM peak drain current Tsp=25 °C; pulsed; tp≤10 µs; see Figure 3 - -28.8 A
Ptot total power dissipation Tsp=25 °C; see Figure 2 -6.9 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Source-drain diode source current Tsp =25°C - -5.8 A
ISM peak source current Tsp=25 °C; pulsed; tp≤10µs - -23 A
NXP Semiconductors PMK30EP
P-channel TrenchMOS extremely low level FET
NXP Semiconductors PMK30EP
P-channel TrenchMOS extremely low level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-sp) thermal resistance from junction to
solder point
see Figure 4 --18 K/W
NXP Semiconductors PMK30EP
P-channel TrenchMOS extremely low level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage =-250µA; VGS =0V; Tj=25°C -30 --V =-250µA; VGS =0V; Tj= -55°C -27 --V
VGS(th) gate-source threshold
voltage =-250µA; VDS =VGS; Tj =25°C;
see Figure 7; see Figure 8 - -3 V =-250µA; VDS =VGS; Tj= 150 °C;
see Figure 7; see Figure 8
-0.7 --V =-250µA; VDS =VGS; Tj =-55 °C;
see Figure 7; see Figure 8
---3.3 V
IDSS drain leakage current VDS =-30 V; VGS =0V; Tj=25°C ---1 µA
VDS =-30 V; VGS =0V; Tj=70°C - - -10 µA
IGSS gate leakage current VGS =16V; VDS =0V; Tj=25°C - - -100 nA
VGS =-16 V; VDS =0V; Tj=25°C - - -100 nA
RDSon drain-source on-state
resistance
VGS =-10 V; ID =-9.2A; Tj =25 °C;
see Figure 9 1619mΩ
VGS =-10 V; ID =-9.2A; Tj =150 °C;
see Figure 9 2531mΩ
VGS =-4.5 V; ID =-7.3A; Tj =25°C;
see Figure 10; see Figure 9 2430mΩ
Dynamic characteristicsQG(tot) total gate charge ID =-9.2A; VDS =-15 V; VGS =-10V; =25°C; see Figure 11; see Figure 12
-50 - nC
QGS gate-source charge ID =-9.2A; VDS =-15 V; VGS =-10V;
see Figure 11; see Figure 12 -nC
QGD gate-drain charge ID =-9.2A; VDS =-15 V; VGS =-10V; =25°C; see Figure 11; see Figure 12 -nC
VGS(pl) gate-source plateau
voltage =-9.2A; VDS =-15 V; Tj =25°C;
see Figure 11; see Figure 12
--2.5 - V
Ciss input capacitance VDS =-25 V; VGS=0 V; f=1 MHz; =25°C; see Figure 13 2240 - pF
Coss output capacitance - 325 - pF
Crss reverse transfer
capacitance 220 - pF
td(on) turn-on delay time VDS =-15 V; RL =6 Ω; VGS =-10V;
RG(ext) =6 Ω; Tj =25°C
-10 - ns rise time - 8 - ns
td(off) turn-off delay time - 56 - ns fall time - 21 - ns
Source-drain diodeVSD source-drain voltage IS= -3.45 A; VGS =0V; Tj =25°C;
see Figure 14 -0.8 -1.2 V
NXP Semiconductors PMK30EP
P-channel TrenchMOS extremely low level FET
NXP Semiconductors PMK30EP
P-channel TrenchMOS extremely low level FET
