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Partno	Mfg	Dc	Qty	Available	Descript
PMGD130UN	NXP/PH	N/a	10000	avai	20 V, dual N-channel Trench MOSFET

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PMGD130UN
20 V, dual N-channel Trench MOSFET
Product profile1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching sircuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMGD130UN
20 V, dual N-channel Trench MOSFET
Rev. 1 — 1 June 2012 Product data sheet
Table 1. Quick reference data
Per transistor
VDS drain-source voltage Tj=25°C --20 V
VGS gate-source voltage -8 - 8 V drain current VGS =4.5 V; Tamb =25°C; t ≤ 5 s [1] --1.3 A
Static characteristics (per transistor)
RDSon drain-source on-state
resistance
VGS =4.5 V; ID= 1.2 A; Tj=25°C - 118 145 mΩ
NXP Semiconductors PMGD130UN
20 V, dual N-channel Trench MOSFET Pinning information Ordering information Marking
[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Table 3. Ordering information
PMGD130UN TSSOP6 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codes
PMGD130UN U8%
NXP Semiconductors PMGD130UN
20 V, dual N-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VDS drain-source voltage Tj =25°C - 20 V
VGS gate-source voltage -8 8 V drain current VGS =4.5 V; Tamb =25°C; t ≤ 5 s [1] -1.3 A
VGS =4.5 V; Tamb =25°C [1] -1.2 A
VGS =4.5 V; Tamb =100°C [1] -0.7 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 4.8 A
Ptot total power dissipation Tamb =25°C [2] - 260 mW
[1] - 310 mW
Tsp=25°C - 905 mW
Source-drain diode source current Tamb =25°C [1] -0.7 A
Per device
Ptot total power dissipation Tamb =25°C [2] - 390 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
NXP Semiconductors PMGD130UN
20 V, dual N-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 , t ≤ 5 s.
Table 6. Thermal characteristics
Per transistor
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 417 480 K/W
[2] - 352 405 K/W
[3] - 295 340 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 120 138 K/W
Per device
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - - 320 K/W
NXP Semiconductors PMGD130UN
20 V, dual N-channel Trench MOSFET

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