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Partno	Mfg	Dc	Qty	Available	Descript
PMG85XP	NXP/PH	N/a	10000	avai	20 V, 2 A P-channel Trench MOSFET

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PMG85XP
20 V, 2 A P-channel Trench MOSFET
Product profile1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMG85XP
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 28 June 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj=25°C ---20 V
VGS gate-source voltage -12 - 12 V drain current VGS =-4.5V; Tj =25°C [1] ---2 A
Static characteristics
RDSon drain-source on-state
resistance
VGS =-4.5V; ID =-2 A; Tj =25°C - 90 115 mΩ
NXP Semiconductors PMG85XP
20 V, 2 A P-channel Trench MOSFET Pinning information Ordering information Marking
[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Table 3. Ordering information
PMG85XP TSSOP6 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codes
PMG85XP YA%
NXP Semiconductors PMG85XP
20 V, 2 A P-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - -20 V
VGS gate-source voltage -12 12 V drain current VGS =-4.5 V; Tj =25°C [1] --2 A
VGS =-4.5 V; Tj =100°C [1] --1.3 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -8 A
Ptot total power dissipation Tamb =25°C [2] - 375 mW
[1] - 725 mW
Tsp=25°C - 2400 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] --0.7 A
NXP Semiconductors PMG85XP
20 V, 2 A P-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 290 334 K/W
[2] - 150 173 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 4552K/W
NXP Semiconductors PMG85XP
20 V, 2 A P-channel Trench MOSFET
NXP Semiconductors PMG85XP
20 V, 2 A P-channel Trench MOSFET Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =-250µA; VGS =0V; Tj=25°C -20 --V
VGSth gate-source threshold
voltage =-250µA; VDS =VGS; Tj=25°C -0.65 -0.9 -1.15 V
IDSS drain leakage current VDS =-20 V; VGS =0V; Tj=25°C ---1 µA
VDS =-20 V; VGS =0V; Tj= 150°C - - -15 µA
IGSS gate leakage current VGS =12V; VDS =0V; Tj=25°C - - 100 nA
VGS =-12 V; VDS =0V; Tj=25°C - - -100 nA
RDSon drain-source on-state
resistance
VGS =-4.5V; ID =-2 A; Tj =25°C - 90 115 mΩ
VGS =-4.5V; ID =-2 A; Tj= 150°C - 130 166 mΩ
VGS =-2.5V; ID =-2 A; Tj=25°C - 125 160 mΩ
gfs forward
transconductance
VDS =-5V; ID =-2A; Tj =25°C - 6.3 - S
Dynamic characteristics
QG(tot) total gate charge VDS =-10 V; ID =-1A; VGS =-4.5V; =25°C
-4.8 7.2 nC
QGS gate-source charge - 1.1 - nC
QGD gate-drain charge - 1 - nC
Ciss input capacitance VDS= -10 V; f=1 MHz; VGS =0V; =25°C 560 - pF
Coss output capacitance - 80 - pF
Crss reverse transfer
capacitance
-55 -pF
td(on) turn-on delay time VDS =-10 V; VGS =-4.5V; RG(ext) =6Ω; =25°C; ID =-2.5A
-13 -ns rise time - 35 - ns
td(off) turn-off delay time - 39 - ns fall time - 25 - ns
Source-drain diode
VSD source-drain voltage IS =-0.7A; VGS =0V; Tj=25°C - -0.7 -1.2 V
NXP Semiconductors PMG85XP
20 V, 2 A P-channel Trench MOSFET
NXP Semiconductors PMG85XP
20 V, 2 A P-channel Trench MOSFET

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