PMF87EN Fast Delivery |IC PHOENIX CO.,LIMITED

PMF87EN ,30 V, single N-channel Trench MOSFETApplications• Relay driverHigh-speed line driver•• Low-side loadswitchSwitching circuits•1.4 Quick ..
PMG370XN ,N-channel TrenchMOS extremely low level FETApplications■ Driver circuits ■ Switching in portable appliances.1.4 Quick reference data■ V ≤ 30 V ..
PMG370XN ,N-channel TrenchMOS extremely low level FETPMG370XNN-channel μTrenchMOS™ extremely low level FETRev. 01 — 13 February 2004 Product dataMBD1281 ..
PMG45UN ,20 V, single N-channel Trench MOSFETApplications• Relay driverHigh-speed line driver•• Low-side loadswitchSwitching circuits•1.4 Quick ..
PMG85XP ,20 V, 2 A P-channel Trench MOSFETApplications Relay driver High-side loadswitch High-speed line driver Switching circuits1.4 Qui ..
PMGD130UN ,20 V, dual N-channel Trench MOSFETApplications Relay driver Low-side loadswitch High-speed line driver Switching sircuits1.4 Quic ..
PST993E , System Reset
PST993I , System Reset
PST994 , System Reset
PST994 , System Reset
PST994I , System Reset
PT100MF0MP , Surface Mount Type, Opaque Resin Phototransistor

PMF87EN
30 V, single N-channel Trench MOSFET
PMF87EN
30 V, single N-channel Trench MOSFET1 August 2012 Product data sheet Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) smallSurface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Logic-level compatible• Very fast switching• Trench MOSFET technology
1.3 Applications Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 30 V
VGS gate-source voltage
Tj = 25 °C
-20 - 20 V drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 1.9 A
Static characteristics
RDSon drain-source on-stateresistance VGS = 10 V; ID = 1.7 A; Tj = 25 °C - 67 80 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMF87EN
30 V, single N-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate S source D drain 1 2
SC-70 (SOT323) S
017aaa253 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMF87EN SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
Type number Marking code
[1]
PMF87EN VA%
[1] % = placeholder for manufacturing site code
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 30 V
VGS gate-source voltage
Tj = 25 °C
-20 20 V
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 1.9 A
VGS = 10 V; Tamb = 25 °C [1] - 1.7 A drain current
VGS = 10 V; Tamb = 100 °C [1] - 1.1 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 6.8 A
[2] - 275 mWTamb = 25 °C
[1] - 355 mW
Ptot total power dissipation
Tsp = 25 °C - 1810 mW
NXP Semiconductors PMF87EN
30 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - 0.7 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as a
function of junction temperature (°C)-75 17512525 75-25
017aaa124
Ider(%)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors PMF87EN
30 V, single N-channel Trench MOSFET
017aaa725
VDS (V)10-1 102101
10-1(A)
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
Limit RDSon = VDS/ID
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 6 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 394 453 K/W
[2] - 308 354 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air
[3] - 263 302 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint 60 70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2]2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 , t ≤ 5 s.
NXP Semiconductors PMF87EN
30 V, single N-channel Trench MOSFET
017aaa445
Zth(j-a)(K/W)
10-110-5 1010-210-4 10210-1 tp (s)10-3 1031
duty cycle = 1
0.75 0.50.33 0.250.2
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa446
Zth(j-a)(K/W)
10-110-5 1010-210-4 10210-1 tp (s)10-3 1031
duty cycle = 1
0.75 0.50.33 0.250.2
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Characteristics Max Unit - V 2.5 V 1 µA 10 µA
NXP Semiconductors PMF87EN
30 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 10 V; ID = 1.7 A; Tj = 25 °C - 67 80 mΩ
VGS = 10 V; ID = 1.7 A; Tj = 150 °C - 101 120 mΩ
RDSon drain-source on-stateresistance
VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C - 87 110 mΩ
gfs forward
transconductance
VDS = 10 V; ID = 1.7 A; Tj = 25 °C - 5.8 - S
Dynamic characteristics
QG(tot) total gate charge - 3.1 4.7 nC
QGS gate-source charge - 0.46 - nC
QGD gate-drain charge
VDS = 15 V; ID = 1.7 A; VGS = 10 V;
Tj = 25 °C 0.42 - nC
Ciss input capacitance - 135 - pF
Coss output capacitance - 33 - pF
Crss reverse transfercapacitance
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 14 - pF
td(on) turn-on delay time - 3 - ns rise time - 14 - ns
td(off) turn-off delay time - 15 - ns fall time
VDS = 15 V; ID = 1.7 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C 6 - ns
Source-drain diode
VSD source-drain voltage IS = 0.7 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V
NXP Semiconductors PMF87EN
30 V, single N-channel Trench MOSFET
VDS (V)0 431 2
017aaa726
6.8(A)V4.5VV VGS=3.4V
3.2VV
2.8V
2.5V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values
017aaa156
VGS (V)0.0 3.02.01.0-4
10-3(A)
(1) (3)(2)
Tj = 25 °C; VDS = 5 V
(1) minimum values(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa727
RDSon(mΩ)
2.8V 3V 3.2V 3.4V 3.5VV
VGS=10V
4.5V
017aaa728
VGS (V)0 1284
RDSon(mΩ)=25°C=150°C
ID = 1.7 A
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PMF87EN	NXP/PH	N/a	10000	avai	30 V, single N-channel Trench MOSFET