PMF290XN ,N-channel TrenchMOS extremely low level FETApplications■ Driver circuits ■ Switching in portable appliances.1.4 Quick reference data■ V ≤ 20 V ..
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PMF290XN
N-channel TrenchMOS extremely low level FET
PMF290XNN-channel μT renchMOS™ extremely low level FET
Rev. 01 — 27 February 2004 Product dataM3D102
Product profile
1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Surface mounted package � Footprint 40% smaller than SOT23 Low on-state resistance � Low threshold voltage. Driver circuits � Switching in portable appliances. VDS≤20V � ID≤ 1A Ptot≤ 0.56W � RDSon≤ 350 mΩ.
Table 1: Pinning - SOT323 (SC-70), simplified outline and symbol gate (g)
SOT323 (SC-70) source (s) drain (d)
MBC870Top view
MBB076
Philips Semiconductors PMF290XN
N-channel μTrenchMOS™ extremely low level FET
Ordering information Limiting values
Table 2: Ordering informationPMF290XN SC-70 Plastic surface mounted package; 3 leads SOT323
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 20 V
VDGR drain-gate voltage (DC) 25°C≤Tj≤ 150 °C; RGS =20kΩ -20 V
VGS gate-source voltage (DC) - ±12 V drain current (DC) Tsp =25 °C; VGS= 4.5V; Figure2 and3 -1 A
Tsp= 100 °C; VGS= 4.5V; Figure2 - 0.63 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 -2 A
Ptot total power dissipation Tsp =25 °C; Figure1 - 0.56 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C - 0.47 A
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs - 0.94 A
Philips Semiconductors PMF290XN
N-channel μTrenchMOS™ extremely low level FET
Philips Semiconductors PMF290XN
N-channel μTrenchMOS™ extremely low level FET
Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junctionto solder point Figure4 - - 220 K/W
Philips Semiconductors PMF290XN
N-channel μTrenchMOS™ extremely low level FET
Characteristics
Table 5: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown voltage ID =1 μA; VGS =0V =25°C 20 --V= −55°C 18 --V
VGS(th) gate-source threshold voltage ID= 0.25 mA; VDS =VGS; Figure9 =25°C 0.5 1 1.5 V= 150°C 0.35 - - V= −55°C - - 1.8 V
IDSS drain-source leakage current VDS =20V; VGS =0V =25°C --1 μA= 150°C - - 100 μA
IGSS gate-source leakage current VGS= ±12 V; VDS=0V - 10 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 0.2A; Figure7 and8 =25°C - 290 350 mΩ= 150°C - 464 560 mΩ
VGS= 2.5 V; ID= 0.1A; Figure7 and8 - 460 550 mΩ
Dynamic characteristicsQg(tot) total gate charge ID=1 A; VDD =10V; VGS= 4.5V;
Figure13 0.72 - nC
Qgs gate-source charge - 0.18 - nC
Qgd gate-drain (Miller) charge - 0.18 - nC
Ciss input capacitance VGS =0V; VDS=20 V; f=1 MHz;
Figure11
-34 - pF
Coss output capacitance - 12 - pF
Crss reverse transfer capacitance - 8 - pF
td(on) turn-on delay time VDD =10V; RL =6Ω;
VGS= 4.5V;RG =6Ω -ns rise time -11 - ns
td(off) turn-off delay time - 11 - ns fall time -6 -ns
Source-drain diodeVSD source-drain (diode forward) voltageIS= 0.3 A; VGS =0V; Figure12 - 0.8 1.2 V
Philips Semiconductors PMF290XN
N-channel μTrenchMOS™ extremely low level FET
