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Partno	Mfg	Dc	Qty	Available	Descript
PMF250XN	NXP/PH	N/a	10000	avai	30 V, 0.9 A N-channel Trench MOSFET

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PMF250XN
30 V, 0.9 A N-channel Trench MOSFET
Product profile1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Pinning information
PMF250XN
30 V, 0.9 A N-channel Trench MOSFET
Rev. 1 — 7 December 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj=25°C --30 V
VGS gate-source voltage -12 - 12 V drain current VGS =4.5 V; Tamb =25°C [1] --0.9 A
Static characteristics
RDSon drain-source on-state
resistance
VGS =4.5 V; ID= 0.9 A; Tj=25°C - 234 300 mΩ
Table 2. Pinning information
NXP Semiconductors PMF250XN
30 V, 0.9 A N-channel Trench MOSFET Ordering information Marking
[1] % = placeholder for manufacturing site code Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 3. Ordering information
PMF250XN SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
PMF250XN AZ%
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - 30 V
VGS gate-source voltage -12 12 V drain current VGS =4.5 V; Tamb =25°C [1] -0.9 A
VGS =4.5 V; Tamb =100°C [1] -0.6 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 3.6 A
Ptot total power dissipation Tamb =25°C [2] - 275 mW
[1] - 340 mW
Tsp=25°C - 1065 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] -0.4 A
NXP Semiconductors PMF250XN
30 V, 0.9 A N-channel Trench MOSFET
NXP Semiconductors PMF250XN
30 V, 0.9 A N-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 397 457 K/W
[2] - 318 366 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 102 117 K/W
NXP Semiconductors PMF250XN
30 V, 0.9 A N-channel Trench MOSFET CharacteristicsTable 7. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj=25°C 30 --V
VGSth gate-source threshold
voltage =250 µA; VDS =VGS; Tj=25°C 0.5 1 1.5 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C --1 µA
VDS =30V; VGS =0V; Tj= 150°C --10 µA
IGSS gate leakage current VGS =12V; VDS =0V; Tj=25°C - - 100 nA
VGS =-12 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID= 0.9 A; Tj=25°C - 234 300 mΩ
VGS =4.5 V; ID= 0.9 A; Tj= 150°C - 351 450 mΩ
VGS =2.5 V; ID= 0.2 A; Tj=25°C - 324 540 mΩ
gfs forward
transconductance
VDS =10V; ID= 0.9 A; Tj =25°C - 2 - S
Dynamic characteristics
QG(tot) total gate charge VDS =15V; ID= 0.9 A; VGS =4.5V; =25°C 0.74 1.1 nC
QGS gate-source charge - 0.26 - nC
QGD gate-drain charge - 0.22 - nC
Ciss input capacitance VDS =15V; f=1MHz; VGS =0V; =25°C
-50 -pF
Coss output capacitance - 10 - pF
Crss reverse transfer
capacitance -pF
td(on) turn-on delay time VDS =15V; VGS =4.5 V; RG(ext) =6 Ω; =25°C; ID =0.9A -ns rise time - 15 - ns
td(off) turn-off delay time - 11 - ns fall time -8 -ns
Source-drain diode
VSD source-drain voltage IS =-0.3A; VGS =0V; Tj =25°C - 0.8 1.2 V

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