PMF170XP Fast Delivery |IC PHOENIX CO.,LIMITED

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PMF170XP
20 V, 1 A P-channel Trench MOSFET
PMF170XP20 V , 1 A P-channel Trench MOSFET29 October 2013 Product data sheet General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) smallSurface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low RDSon• Very fast switching• Trench MOSFET technology Applications Relay driver• High-speed line driver• High-side loadswitch• Switching circuits Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - -20 V
VGS gate-source voltage
Tj = 25 °C
-12 - 12 V drain current VGS = -4.5 V; Tamb 25 °C [1] - - -1 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMF170XP
20 V, 1 A P-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate S source D drain 1 2
SC-70 (SOT323) 017aaa094 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMF170XP SC-70 plastic surface-mounted package; 3 leads SOT323 Marking
Table 4. Marking codes
Type number Marking code
[1]
PMF170XP XD%
[1] % = placeholder for manufacturing site code Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - -20 V
VGS gate-source voltage
Tj = 25 °C
-12 12 V
VGS = -4.5 V; Tamb 25 °C [1] - -1 AID drain current
VGS = -4.5 V; Tamb = 100 °C [1] - -0.7 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -4 A
[2] - 290 mWTamb = 25 °C
[1] - 360 mW
Ptot total power dissipation
Tsp = 25 °C - 1670 mW junction temperature -55 150 °C
NXP Semiconductors PMF170XP
20 V, 1 A P-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - -0.4 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as a
function of junction temperature (°C)-75 17512525 75-25
017aaa124
Ider(%)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors PMF170XP
20 V, 1 A P-channel Trench MOSFET
017aaa300
VDS (V)-10-1 -102-10-1
-10(A)
(1)
(2)
(3)
(4)
(5)
Limit RDSon = VDS/ID
IDM = single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 377 430 K/WRth(j-a) thermal resistance
in free air 350 K/W 75 K/W2.
NXP Semiconductors PMF170XP
20 V, 1 A P-channel Trench MOSFET
017aaa301
tp (s)10-3 102 10310110-2 10-12
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.50.33 0.250.2
0.05 0.02
0.01 0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa302
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.50.33 0.250.2
0.05 0.02
0.01 0
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics Max Unit - V -1.15 V -1 µA -10 µA
NXP Semiconductors PMF170XP
20 V, 1 A P-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nAIGSS gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA
VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ
VGS = -4.5 V; ID = -1 A; Tj = 150 °C - 250 284 mΩ
RDSon drain-source on-stateresistance
VGS = -2.5 V; ID = -1 A; Tj = 25 °C - 240 300 mΩ
gfs forward
transconductance
VDS = -5 V; ID = -1 A; Tj = 25 °C - 1.9 - S
Dynamic characteristics
QG(tot) total gate charge - 2.6 3.9 nC
QGS gate-source charge - 0.63 - nC
QGD gate-drain charge
VDS = -10 V; ID = -1 A; VGS = -4.5 V;
Tj = 25 °C 0.53 - nC
Ciss input capacitance - 280 - pF
Coss output capacitance - 43 - pF
Crss reverse transfercapacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 30 - pF
td(on) turn-on delay time - 10 - ns rise time - 16 - ns
td(off) turn-off delay time - 31 - ns fall time
VDS = -10 V; ID = -1 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C 13 - ns
Source-drain diode
VSD source-drain voltage IS = -0.4 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V
NXP Semiconductors PMF170XP
20 V, 1 A P-channel Trench MOSFET
VDS (V)0 -4-3-1 -2
017aaa303(A)
VGS= -3.5V-4.5V3.0V2.5V1.8V2.0V1.5V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values
017aaa129
VGS(V)0.0 -1.5-1.0-0.5
-10-3(A)
(2)(1) (3)
Tj = 25 °C; VDS = -3 V
(1) minimum values(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa304
RDSon(mΩ)
(1)
(2)
(3) (4)
(5)
VGS (V)0 -6-4-2
017aaa305
RDSon(mΩ)
(1)
(2)
ID = -1 A
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
NXP Semiconductors PMF170XP
20 V, 1 A P-channel Trench MOSFET
017aaa306
VGS (V)0 -3-2-1(A)
(1)
(1)
(2)
(2)
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)-60 1801200 60
017aaa307
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typicalvalues
017aaa134
VGS(th)(V)
(1)
(2)
(3)
017aaa308
VDS (V)-10-1 -102-10-1
103(pF)
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvalues

Partno	Mfg	Dc	Qty	Available	Descript
PMF170XP	NXP/PH	N/a	10000	avai	20 V, 1 A P-channel Trench MOSFET