PMEG6020ER ,2 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
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PMEG6020ER
2 A low V_F MEGA Schottky barrier rectifier
1. Product profile
1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits Average forward current: IF(AV)≤ 2A Reverse voltage: VR≤60V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG6020ER
2 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 3 March 2010 Product data sheet
Table 1. Quick reference data =25 °C unless otherwise specified.
IF(AV) average forward current square wave; δ= 0.5; =20 kHz
Tamb≤75°C [1] -- 2 A
Tsp≤ 135 °C- - 2 A reverse voltage - - 60 V forward voltage IF=2A - 460 530 mV reverse current VR =60V - 60 150 μA
NXP Semiconductors PMEG6020ER
2 A low VF MEGA Schottky barrier rectifier
2. Pinning information[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning cathode [1] anode
Table 3. Ordering informationPMEG6020ER - plastic surface-mounted package; 2 leads SOD123W
Table 4. Marking codesPMEG6020ER BC
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage Tj =25 °C- 60 V
IF(AV) average forward current square wave; δ= 0.5;
f=20 kHz
Tamb≤75°C [1] -2 A
Tsp≤ 135 °C- 2 A
IFSM non-repetitive peak
forward current
square wave; =8ms
[2] -50 A
Ptot total power dissipation Tamb≤25°C [3][4] -0.57 W
[3][5] -0.95 W
[3][1] -1.8 W
NXP Semiconductors PMEG6020ER
2 A low VF MEGA Schottky barrier rectifier[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj =25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab. junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2]
[3]- - 220 K/W
[4]- - 130 K/W
[5] --70 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[6] --18 K/W
NXP Semiconductors PMEG6020ER
2 A low VF MEGA Schottky barrier rectifierNXP Semiconductors PMEG6020ER
2 A low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7. Characteristics =25 °C unless otherwise specified. forward voltage IF= 0.1A - 300 340 mV= 0.5A - 360 420 mV=1A - 400 460 mV= 1.5A - 430 500 mV=2A - 460 530 mV reverse current VR =5V - 2.5 - μA =10V - 3.5 - μA =60V - 60 150 μA diode capacitance f=1 MHz=1V - 240 - pF =10V - 80 - pF
NXP Semiconductors PMEG6020ER
2 A low VF MEGA Schottky barrier rectifierNXP Semiconductors PMEG6020ER
2 A low VF MEGA Schottky barrier rectifier
