PMEG6010EP ,1 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PMEG6010ER ,1 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PMEG6020EP ,2 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25C unless otherwise specifie ..
PMEG6020ER ,2 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PMEG6030EP ,3 A low V_F MEGA Schottky barrier rectifierLimiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter ..
PMEM4010ND ,NPN transistor/Schottky diode module
PST9140 , System Reset
PST9142 , System Reset
PST993E , System Reset
PST993I , System Reset
PST994 , System Reset
PST994 , System Reset
PMEG6010EP
1 A low V_F MEGA Schottky barrier rectifier
1. Product profile
1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits Average forward current: IF(AV)≤ 1A Reverse voltage: VR≤60V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG6010EP
1 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 17 March 2010 Product data sheet
Table 1. Quick reference data =25 °C unless otherwise specified.
IF(AV) average forward current square wave; δ= 0.5; =20 kHz
Tamb≤ 115°C [1] -- 1 A
Tsp≤ 145 °C- - 1 A reverse voltage - - 60 V forward voltage IF=1A - 460 530 mV reverse current VR =60V - 30 60 μA
NXP Semiconductors PMEG6010EP
1 A low VF MEGA Schottky barrier rectifier
2. Pinning information[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning cathode [1] anode 12
Table 3. Ordering informationPMEG6010EP - plastic surface-mounted package; 2 leads SOD128
Table 4. Marking codesPMEG6010EP A9
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage Tj =25 °C- 60 V
IF(AV) average forward current square wave; δ= 0.5;
f=20 kHz
Tamb≤ 115°C [1] -1 A
Tsp≤ 145 °C- 1 A
IFSM non-repetitive peak
forward current
square wave; =8ms
[2] -50 A
Ptot total power dissipation Tamb≤25°C [3][4] -625 mW
[3][5]- 1050 mW
[3][1]- 2100 mW
NXP Semiconductors PMEG6010EP
1 A low VF MEGA Schottky barrier rectifier[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj =25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab. junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2]
[3]- - 200 K/W
[4]- - 120 K/W
[5] --60 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[6] --12 K/W
NXP Semiconductors PMEG6010EP
1 A low VF MEGA Schottky barrier rectifierNXP Semiconductors PMEG6010EP
1 A low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7. Characteristics =25 °C unless otherwise specified. forward voltage IF= 0.1A - 320 370 mV= 0.7A - 430 490 mV=1A - 460 530 mV reverse current VR =5V - 1.2 - μA =10V - 1.7 - μA =60V - 30 60 μA diode capacitance f=1 MHz=1V - 120 - pF =10V - 40 - pF
NXP Semiconductors PMEG6010EP
1 A low VF MEGA Schottky barrier rectifierNXP Semiconductors PMEG6010EP
1 A low VF MEGA Schottky barrier rectifier
