PMEG6010CEH ,1 A very low VF MEGA Schottky barrier rectifiersLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG6010CEJ ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG6010EP ,1 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PMEG6010ER ,1 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PMEG6020EP ,2 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25C unless otherwise specifie ..
PMEG6020ER ,2 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PST9140 , System Reset
PST9142 , System Reset
PST993E , System Reset
PST993I , System Reset
PST994 , System Reset
PST994 , System Reset
PMEG6010CEH-PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers withan
integrated guard ring for stress protection, encapsulated in small and flat lead
Surface-Mounted Device (SMD) plastic packages.
1.2 Features Forward current: IF≤ 1A Reverse voltage: VR≤60V Very low forward voltage Small and flat lead SMD plastic packages
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 02 — 27 March 2007 Product data sheet
Table 1. Product overviewPMEG6010CEH SOD123F - single
PMEG6010CEJ SOD323F SC-90 single
Table 2. Quick reference data forward current Tsp≤55°C --1 A reverse voltage - - 60 V forward voltage IF =1A [1]- 570 660 mV
NXP Semiconductors PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking
Table 3. Pinning cathode [1] anode
001aab540
sym001
Table 4. Ordering informationPMEG6010CEH - plastic surface-mounted package; 2 leads SOD123F
PMEG6010CEJ SC-90 plastic surface-mounted package; 2 leads SOD323F
Table 5. Marking codesPMEG6010CEH CA
PMEG6010CEJ EQ
NXP Semiconductors PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 60 V forward current Tsp≤55 °C- 1 A
IFRM repetitive peak forward current tp≤1 ms; 0.25 A
IFSM non-repetitive peak forward
current
square wave; =8ms
PMEG6010CEH - 9 A
PMEG6010CEJ - 10 A
Ptot total power dissipation Tamb≤25°C
PMEG6010CEH [1]- 375 mW
[2]- 830 mW
PMEG6010CEJ [1]- 350 mW
[2]- 830 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]
PMEG6010CEH [2]- - 330 K/W
[3]- - 150 K/W
PMEG6010CEJ [2]- - 350 K/W
[3]- - 150 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[4]
PMEG6010CEH - - 60 K/W
PMEG6010CEJ - - 55 K/W
NXP Semiconductors PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified. forward voltage [1]=1 mA - 210 250 mV=10 mA - 270 310 mV= 100 mA - 350 400 mV= 500 mA - 460 530 mV= 700 mA - 510 580 mV=1A - 570 660 mV reverse current VR=5V - 0.8 - μA =10V - 1.1 - μA =60V - 11 50 μA diode capacitance VR =1V; f=1MHz - 60 68 pF
NXP Semiconductors PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers Test information Package outline
10. Packing information[1] For further information and the availability of packing methods, see Section14.
Table 9. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
PMEG6010CEH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG6010CEJ SOD323F