PMEG4030EP ,3 A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG4030ER ,3 A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG4050EP ,5 A low Vf MEGA Schottky barrier rectifierLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG4050EP ,5 A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG6010AED ,Low VF (MEGA) Schottky barrier diodeLIMITING VALUESIn accordance with Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER CONDI ..
PMEG6010AED ,Low VF (MEGA) Schottky barrier diode
PST9140 , System Reset
PST9142 , System Reset
PST993E , System Reset
PST993I , System Reset
PST994 , System Reset
PST994 , System Reset
PMEG4030EP
3 A low Vf MEGA Schottky barrier rectifier
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier withan
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features Average forward current: IF(AV)≤ 3A Reverse voltage: VR≤40V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG4030EP
3 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 7 August 2009 Product data sheet
Table 1. Quick reference data =25 °C unless otherwise specified.
IF(AV) average forward current square wave;= 0.5;
f=20kHz
Tamb≤65°C [1] --3 A
Tsp≤ 140°C --3 A reverse voltage - - 40 V forward voltage IF=3A - 430 490 mV reverse current VR=40V - 35 200 μA
NXP Semiconductors PMEG4030EP
3 A low VF MEGA Schottky barrier rectifier Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking Limiting values
Table 2. Pinning cathode [1] anode 12
sym001
Table 3. Ordering informationPMEG4030EP - plastic surface-mounted package; 2 leads SOD128
Table 4. Marking codesPMEG4030EP AE
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage Tj =25°C - 40 V
IF(AV) average forward current square wave;= 0.5;
f=20kHz
Tamb≤65°C [1] -3 A
Tsp≤ 140 °C- 3 A
IFSM non-repetitive peak
forward current
square wave; =8ms
[2] -50 A
Ptot total power dissipation Tamb≤25°C [3][4]- 625 mW
[3][5]- 1050 mW
[3][1]- 2100 mW
NXP Semiconductors PMEG4030EP
3 A low VF MEGA Schottky barrier rectifier[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj =25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab. junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2]
[3]- - 200 K/W
[4]- - 120 K/W
[5] --60 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[6] --12 K/W
NXP Semiconductors PMEG4030EP
3 A low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG4030EP
3 A low VF MEGA Schottky barrier rectifier Characteristics
Table 7. Characteristics =25 °C unless otherwise specified. forward voltage IF= 0.1A - 285 320 mV=1A - 360 420 mV=3A - 430 490 mV reverse current VR =10V - 7 - μA=40V - 35 200 μA diode capacitance f=1MHz=1V - 350 - pF=10V - 140 - pF
NXP Semiconductors PMEG4030EP
3 A low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG4030EP
3 A low VF MEGA Schottky barrier rectifier
