PMEG4010EH ,1 A very low VF MEGA Schottky barrier rectifiersGeneral descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers w ..
PMEG4010EJ ,1 A very low VF MEGA Schottky barrier rectifiersApplicationsn Low voltage rectificationn High efficiency DC-to-DC conversionn Switch mode power suppl ..
PMEG4010EP ,1 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PMEG4010ER ,1 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PMEG4020EP ,2 A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG4020ER ,2 A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PST9140 , System Reset
PST9142 , System Reset
PST993E , System Reset
PST993I , System Reset
PST994 , System Reset
PST994 , System Reset
PMEG4010EH-PMEG4010EJ
1 A very low VF MEGA Schottky barrier rectifiers
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers withan
integrated guard ring for stress protection, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
1.2 Features Forward current: IF≤ 1A Reverse voltage: VR≤40V Very low forward voltage Small SMD plastic packages
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEG4010EH; PMEG4010EJ;
PMEG4010ET
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 04 — 21 March 2007 Product data sheet
Table 1. Product overviewPMEG4010EH SOD123F - - single
PMEG4010EJ SOD323F SC-90 - single
PMEG4010ET SOT23 - TO-236AB single
Table 2. Quick reference data forward current Tsp≤55°C --1 A reverse voltage - - 40 V forward voltage IF= 1000 mA [1]- 540 640 mV
NXP Semiconductors PMEG4010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
SOD123F; SOD323F cathode [1] anode
SOT23 anode n.c. cathode
001aab540
sym001
006aaa436
Table 4. Ordering informationPMEG4010EH - plastic surface-mounted package; 2 leads SOD123F
PMEG4010EJ SC-90 plastic surface-mounted package; 2 leads SOD323F
PMEG4010ET - plastic surface-mounted package; 3 leads SOT23
Table 5. Marking codesPMEG4010EH AB
PMEG4010EJ AL
PMEG4010ET *AW
NXP Semiconductors PMEG4010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Reflow soldering is the only recommended soldering method.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 40 V forward current Tsp≤55 °C- 1 A
IFRM repetitive peak forward
current≤1 ms;δ≤ 0.25
PMEG4010EH - 7 A
PMEG4010EJ - 7 A
PMEG4010ET - 5 A
IFSM non-repetitive peak forward
current
square wave; =8ms A
Ptot total power dissipation Tamb≤25°C
PMEG4010EH [1][3]- 375 mW
[2][3]- 830 mW
PMEG4010EJ [1][3]- 350 mW
[2][3]- 830 mW
PMEG4010ET [1]- 280 mW
[2]- 420 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMEG4010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Reflow soldering is the only recommended soldering method.
[5] Soldering point of cathode tab.
Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]
PMEG4010EH [2][4]- - 330 K/W
[3][4]- - 150 K/W
PMEG4010EJ [2][4]- - 350 K/W
[3][4]- - 150 K/W
PMEG4010ET [2]- - 440 K/W
[3]- - 300 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[5]
PMEG4010EH - - 60 K/W
PMEG4010EJ - - 55 K/W
PMEG4010ET - - 120 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified. forward voltage [1]= 0.1 mA - 95 130 mV=1 mA - 155 210 mV=10 mA - 220 270 mV= 100 mA - 295 350 mV= 500 mA - 420 470 mV= 1000 mA - 540 640 mV reverse current VR =10V - 7 20 μA=40V - 30 100 μA diode capacitance VR =1V;
f=1MHz 4350pF
NXP Semiconductors PMEG4010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG4010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Test information Package outline
