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Partno	Mfg	Dc	Qty	Available	Descript
PMEG4010CEH	NXP	N/a	12000	avai	1 A very low VF MEGA Schottky barrier rectifiers
PMEG4010CEJ	NXP/PHILIPS	N/a	3000	avai	1 A very low VF MEGA Schottky barrier rectifiers

PMEG4010CEH ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG4010CEJ ,1 A very low VF MEGA Schottky barrier rectifiersThermal characteristicsSymbol Parameter Conditions Min Typ Max Unit[1]R thermal resistance from in ..
PMEG4010EH ,1 A very low VF MEGA Schottky barrier rectifiersGeneral descriptionPlanar Maximum Efﬁciency General Application (MEGA) Schottky barrier rectiﬁers w ..
PMEG4010EJ ,1 A very low VF MEGA Schottky barrier rectifiersApplicationsn Low voltage rectiﬁcationn High efﬁciency DC-to-DC conversionn Switch mode power suppl ..
PMEG4010EP ,1 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PMEG4010ER ,1 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference data Table 1. Quick reference dataT =25°C unless otherwise specifie ..
PST9131 , System Reset
PST9140 , System Reset
PST9142 , System Reset
PST993E , System Reset
PST993I , System Reset
PST994 , System Reset

PMEG4010CEH-PMEG4010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
Product proﬁle1.1 General description
Planar Maximum Efﬁciency General Application (MEGA) Schottky barrier rectiﬁers withan
integrated guard ring for stress protection, encapsulated in small and ﬂat lead
Surface-Mounted Device (SMD) plastic packages.
1.2 Features Forward current: IF≤ 1A Reverse voltage: VR≤40V Very low forward voltage Small and ﬂat lead SMD plastic packages
1.3 Applications Low voltage rectiﬁcation High efﬁciency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications
1.4 Quick reference data
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEG4010CEH; PMEG4010CEJ
1 A very low VF MEGA Schottky barrier rectiﬁers
Rev. 02 — 22 March 2007 Product data sheet
Table 1. Product overview
PMEG4010CEH SOD123F - single
PMEG4010CEJ SOD323F SC-90 single
Table 2. Quick reference data forward current Tsp≤55°C --1 A reverse voltage - - 40 V forward voltage IF =1A [1]- 490 570 mV
NXP Semiconductors PMEG4010CEH; PMEG4010CEJ
1 A very low VF MEGA Schottky barrier rectiﬁers Pinning information
[1] The marking bar indicates the cathode. Ordering information Marking
Table 3. Pinning cathode [1] anode
001aab540
sym001
Table 4. Ordering information
PMEG4010CEH - plastic surface-mounted package; 2 leads SOD123F
PMEG4010CEJ SC-90 plastic surface-mounted package; 2 leads SOD323F
Table 5. Marking codes
PMEG4010CEH C9
PMEG4010CEJ EP
NXP Semiconductors PMEG4010CEH; PMEG4010CEJ
1 A very low VF MEGA Schottky barrier rectiﬁers Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a signiﬁcant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 40 V forward current Tsp≤55 °C- 1 A
IFRM repetitive peak forward current tp≤1 ms; 0.25 A
IFSM non-repetitive peak forward
current
square wave; =8ms
PMEG4010CEH - 9 A
PMEG4010CEJ - 10 A
Ptot total power dissipation Tamb≤25°C
PMEG4010CEH [1]- 375 mW
[2]- 830 mW
PMEG4010CEJ [1]- 350 mW
[2]- 830 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]
PMEG4010CEH [2]- - 330 K/W
[3]- - 150 K/W
PMEG4010CEJ [2]- - 350 K/W
[3]- - 150 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[4]
PMEG4010CEH - - 60 K/W
PMEG4010CEJ - - 55 K/W
NXP Semiconductors PMEG4010CEH; PMEG4010CEJ
1 A very low VF MEGA Schottky barrier rectiﬁers Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8. Characteristics
Tamb =25 °C unless otherwise speciﬁed. forward voltage [1]=1 mA - 210 240 mV=10 mA - 270 310 mV= 100 mA - 340 390 mV= 500 mA - 420 490 mV= 700 mA - 450 520 mV=1A - 490 570 mV reverse current VR=5V - 0.8 - μA =10V - 1.1 - μA =40V - 6 50 μA diode capacitance VR =1V; f=1MHz - 69 77 pF
NXP Semiconductors PMEG4010CEH; PMEG4010CEJ
1 A very low VF MEGA Schottky barrier rectiﬁers
NXP Semiconductors PMEG4010CEH; PMEG4010CEJ
1 A very low VF MEGA Schottky barrier rectiﬁers Test information Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section14.
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PMEG4010CEH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG4010CEJ SOD323F

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