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PMEG3050EP
5 A low V_F MEGA Schottky barrier rectifier
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features Average forward current: IF(AV)≤ 5A Reverse voltage: VR≤30V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 10 December 2009 Product data sheet
Table 1. Quick reference data =25 °C unless otherwise specified.
IF(AV) average forward current square wave; δ= 0.5; =20 kHz
Tamb≤35°C [1] --5 A
Tsp≤ 130°C --5 A reverse voltage - - 30 V forward voltage IF=5A - 315 360 mV reverse current VR =30V - 2.6 8 mA
NXP Semiconductors PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking Limiting values
Table 2. Pinning cathode [1] anode 12
Table 3. Ordering informationPMEG3050EP- plastic surface-mounted package; 2 leads SOD128
Table 4. Marking codesPMEG3050EP A7
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage Tj =25 °C- 30 V
IF(AV) average forward current square wave; δ= 0.5;
f=20 kHz
Tamb≤35°C [1] -5 A
Tsp≤ 130 °C- 5 A
IFSM non-repetitive peak
forward current
square wave; =8ms
[2] -70 A
Ptot total power dissipation Tamb≤25°C [3][4] -625 mW
[3][5]- 1050 mW
[3][1]- 2100 mW
NXP Semiconductors PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj =25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab. junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2]
[3]- - 200 K/W
[4]- - 120 K/W
[5] --60 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[6] --12 K/W
NXP Semiconductors PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier Characteristics
Table 7. Characteristics =25 °C unless otherwise specified. forward voltage IF=1A - 240 275 mV=3A - 285 340 mV=5A - 315 360 mV reverse current VR=5V - 330 - μA =30V - 2.6 8 mA diode capacitance f=1 MHz=1V - 800 - pF=10V - 260 - pF
NXP Semiconductors PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG3050EP
5 A low VF MEGA Schottky barrier rectifier
