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PMEG3030EP from NXP,NXP Semiconductors

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15.625ms

PMEG3030EP

Manufacturer: NXP

3 A low V_F MEGA Schottky barrier rectifier

Partnumber Manufacturer Quantity Availability
PMEG3030EP NXP 12000 In Stock

Description and Introduction

3 A low V_F MEGA Schottky barrier rectifier **Introduction to the PMEG3030EP Schottky Diode**  

The PMEG3030EP is a high-performance Schottky diode designed for applications requiring low forward voltage drop and minimal power loss. Featuring a dual common-cathode configuration, this component is ideal for use in power management, voltage clamping, and reverse polarity protection circuits.  

With a maximum forward voltage of 0.38 V at 3 A, the PMEG3030EP ensures efficient energy conversion, reducing heat dissipation in compact designs. Its low leakage current and fast switching characteristics make it suitable for high-frequency applications, including DC-DC converters and switching power supplies.  

The diode’s robust construction allows it to handle peak currents up to 60 A, ensuring reliability in demanding environments. Encased in a compact DPAK (TO-252) package, it offers excellent thermal performance while maintaining a small footprint.  

Engineers favor the PMEG3030EP for its balance of efficiency, speed, and durability, making it a preferred choice in automotive, industrial, and consumer electronics. Whether used in battery charging circuits or as a freewheeling diode, this Schottky diode delivers consistent performance under varying load conditions.  

By minimizing conduction losses and improving system efficiency, the PMEG3030EP stands out as a dependable solution for modern power electronics.

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