PMEG3030BEP ,3 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
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PMEG3050BEP ,5 A low V_F MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
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PMEG4002EB ,0.2 A very low VF MEGA Schottky barrier rectifier in SOD523 packageapplications1.4 Quick reference data Table 1. Quick reference dataSymbol Parameter Conditions Min T ..
PMEG4002EB ,0.2 A very low VF MEGA Schottky barrier rectifier in SOD523 packageLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PST9129 , System Reset
PST9129 , System Reset
PST9130 , System Reset
PST9131 , System Reset
PST9140 , System Reset
PST9142 , System Reset
PMEG3030BEP
3 A low V_F MEGA Schottky barrier rectifier
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier withan
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features Average forward current: IF(AV)≤ 3A Reverse voltage: VR≤30V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 27 October 2009 Product data sheet
Table 1. Quick reference data =25 °C unless otherwise specified.
IF(AV) average forward current square wave;= 0.5;
f=20kHz
Tamb≤70°C [1] --3 A
Tsp≤ 140°C --3 A reverse voltage - - 30 V forward voltage IF=3A - 400 450 mV reverse current VR=30V - 55 150 μA
NXP Semiconductors PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking Limiting values
Table 2. Pinning cathode [1] anode 12
sym001
Table 3. Ordering informationPMEG3030BEP- plastic surface-mounted package; 2 leads SOD128
Table 4. Marking codesPMEG3030BEP A6
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage Tj =25°C - 30 V
IF(AV) average forward current square wave;= 0.5;
f=20kHz
Tamb≤70°C [1] -3 A
Tsp≤ 140 °C- 3 A
IFSM non-repetitive peak
forward current
square wave; =8ms
[2] -50 A
Ptot total power dissipation Tamb≤25°C [3][4]- 625 mW
[3][5]- 1050 mW
[3][1]- 2100 mW
NXP Semiconductors PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj =25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab. junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2]
[3]- - 200 K/W
[4]- - 120 K/W
[5] --60 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[6] --12 K/W
NXP Semiconductors PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier Characteristics
Table 7. Characteristics =25 °C unless otherwise specified. forward voltage IF= 0.1A - 280 320 mV= 0.5A - 330 380 mV=1A - 350 400 mV= 1.5A - 365 420 mV=2A - 380 440 mV=3A - 400 450 mV reverse current VR =5V - 6 - μA =10V - 9 - μA=30V - 55 150 μA diode capacitance f=1MHz=1V - 500 - pF=10V - 170 - pF
NXP Semiconductors PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG3030BEP
3 A low VF MEGA Schottky barrier rectifier
