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Partno	Mfg	Dc	Qty	Available	Descript
PMEG3015EH	NXP	N/a	28000	avai	30 V, 1.5 A ultra low Vf MEGA Schottky barrier rectifiers
PMEG3015EJ	NXP/PHIL	N/a	84000	avai	30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers

PMEG3015EJ ,30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiersLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG3020BEP ,2A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise speciﬁed ..
PMEG3020BER ,2 A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise speciﬁed ..
PMEG3020CEP ,2 A low VF MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise speciﬁed ..
PMEG3020DEP ,2 A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise speciﬁed ..
PMEG3020EP ,2 A low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise speciﬁed ..
PST9127 , System Reset
PST9129 , System Reset
PST9129 , System Reset
PST9130 , System Reset
PST9131 , System Reset
PST9140 , System Reset

PMEG3015EH-PMEG3015EJ
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers
Product profile1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead SMD plastic
packages.
1.2 Features Forward current: ≤ 1.5A Reverse voltage: ≤30V Ultra low forward voltage Small and flat lead SMD plastic packages
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse polarity protection Low power consumption applications
1.4 Quick reference data
[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers
Rev. 03 — 13 January 2010 Product data sheet
Table 1. Product overview
PMEG3015EH SOD123F - single diode
PMEG3015EJ SOD323F SC-90 single diode
Table 2. Quick reference data forward current Tsp≤55 °C- - 1.5 A reverse voltage - - 30 V forward voltage IF =1.5A [1]- 440 550 mV
NXP Semiconductors PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers Pinning information
[1] The marking bar indicates the cathode. Ordering information Marking Limiting values
Table 3. Pinning cathode [1] anode
001aab540
Table 4. Ordering information
PMEG3015EH - plastic surface mounted package; 2 leads SOD123F
PMEG3015EJ SC-90 plastic surface mounted package; 2 leads SOD323F
Table 5. Marking codes
PMEG3015EH AE
PMEG3015EJ EK
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 30 V forward current Tsp≤55 °C- 1.5 A
IFRM repetitive peak forward current tp≤1 ms; δ≤ 0.25 - 4.5 A
IFSM non-repetitive peak forward
current
square wave; =8 ms A
Ptot total power dissipation Tamb≤25°C
PMEG3015EH [1]- 375 mW
[2]- 830 mW
PMEG3015EJ [1]- 360 mW
[2]- 830 mW junction temperature - 150 °C
NXP Semiconductors PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating are available on request.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. Characteristics
[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 7. Thermal characteristics
Rth(j-a) thermal resistance from junction
to ambient
in free air
PMEG3015EH [1][2]- - 330 K/W
[2][3]- - 150 K/W
PMEG3015EJ [1][2]- - 350 K/W
[2][3]- - 150 K/W
Rth(j-sp) thermal resistance from junction
to solder point
PMEG3015EH - - 60 K/W
PMEG3015EJ - - 55 K/W
Table 8. Characteristics
Tamb =25 °C unless otherwise specified. forward voltage IF =1mA [1]- 125 160 mV =10mA [1]- 185 220 mV =100 mA [1]- 255 290 mV =500 mA [1]- 330 380 mV =1A [1]- 400 480 mV =1.5A [1]- 440 550 mV reverse current VR=10V - 60 150 μA=30V - 400 1000 μA diode capacitance VR=1 V; f=1 MHz - 6072pF
NXP Semiconductors PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers Package outline Packing information
[1] For further information and the availability of packing methods, see Section13.
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PMEG3015EH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG3015EJ SOD323F
NXP Semiconductors PMEG3015EH; PMEG3015EJ
30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifiers
10. Soldering

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