PMEG3010EH ,1 A very low VF MEGA Schottky barrier rectifiersApplicationsn Low voltage rectificationn High efficiency DC-to-DC conversionn Switch mode power suppl ..
PMEG3010EJ ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG3010EP ,1 A low VF MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG3010ER ,1 A low VF MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG3010ET ,1 A very low VF MEGA Schottky barrier rectifiersGeneral descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers w ..
PMEG3015EH ,30 V, 1.5 A ultra low Vf MEGA Schottky barrier rectifiersapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PST9127 , System Reset
PST9129 , System Reset
PST9129 , System Reset
PST9130 , System Reset
PST9131 , System Reset
PST9140 , System Reset
PMEG3010EH-PMEG3010EJ-PMEG3010ET
1 A very low VF MEGA Schottky barrier rectifiers
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers withan
integrated guard ring for stress protection, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
1.2 Features Forward current: IF≤ 1A Reverse voltage: VR≤30V Very low forward voltage Small SMD plastic packages
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEG3010EH; PMEG3010EJ;
PMEG3010ET
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 04 — 20 March 2007 Product data sheet
Table 1. Product overviewPMEG3010EH SOD123F - - single
PMEG3010EJ SOD323F SC-90 - single
PMEG3010ET SOT23 - TO-236AB single
Table 2. Quick reference data forward current Tsp≤55°C --1 A reverse voltage - - 30 V forward voltage IF= 1000 mA [1]- 450 560 mV
NXP Semiconductors PMEG3010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
SOD123F; SOD323F cathode [1] anode
SOT23 anode n.c. cathode
001aab540
sym001
006aaa436
Table 4. Ordering informationPMEG3010EH - plastic surface-mounted package; 2 leads SOD123F
PMEG3010EJ SC-90 plastic surface-mounted package; 2 leads SOD323F
PMEG3010ET - plastic surface-mounted package; 3 leads SOT23
Table 5. Marking codesPMEG3010EH AA
PMEG3010EJ AK
PMEG3010ET *AV
NXP Semiconductors PMEG3010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 30 V forward current Tsp≤55 °C- 1 A
IFRM repetitive peak forward
current≤1 ms;δ≤ 0.25
PMEG3010EH - 7 A
PMEG3010EJ - 7 A
PMEG3010ET - 5 A
IFSM non-repetitive peak forward
current
square wave; =8ms A
Ptot total power dissipation Tamb≤25°C
PMEG3010EH [1]- 375 mW
[2]- 830 mW
PMEG3010EJ [1]- 350 mW
[2]- 830 mW
PMEG3010ET [1]- 280 mW
[2]- 420 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMEG3010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]
PMEG3010EH [2]- - 330 K/W
[3]- - 150 K/W
PMEG3010EJ [2]- - 350 K/W
[3]- - 150 K/W
PMEG3010ET [2]- - 440 K/W
[3]- - 300 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[4]
PMEG3010EH - - 60 K/W
PMEG3010EJ - - 55 K/W
PMEG3010ET - - 120 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified. forward voltage [1]= 0.1 mA - 90 130 mV=1 mA - 150 200 mV=10 mA - 215 250 mV= 100 mA - 285 340 mV= 500 mA - 380 430 mV= 1000 mA - 450 560 mV reverse current VR =10V - 12 30 μA=30V - 40 150 μA diode capacitance VR =1V;
f=1MHz 5570pF
NXP Semiconductors PMEG3010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG3010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Test information Package outline
