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Partno	Mfg	Dc	Qty	Available	Descript
PMEG3010CEH	NXP	N/a	50000	avai	1 A very low VF MEGA Schottky barrier rectifiers
PMEG3010CEJ	NXP	N/a	6000	avai	1 A very low VF MEGA Schottky barrier rectifiers
PMEG3010CEJ	NXP/PHILIPS	N/a	3000	avai	1 A very low VF MEGA Schottky barrier rectifiers

PMEG3010CEH ,1 A very low VF MEGA Schottky barrier rectifiersThermal characteristicsSymbol Parameter Conditions Min Typ Max Unit[1]R thermal resistance from in ..
PMEG3010CEJ ,1 A very low VF MEGA Schottky barrier rectifiersLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG3010CEJ ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG3010EB ,1 A very low VF MEGA Schottky barrier rectifierapplications Switch mode power supply1.4 Quick reference data Table 1. Quick reference dataSymbol ..
PMEG3010EH ,1 A very low VF MEGA Schottky barrier rectifiersApplicationsn Low voltage rectificationn High efficiency DC-to-DC conversionn Switch mode power suppl ..
PMEG3010EJ ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PST9127 , System Reset
PST9129 , System Reset
PST9129 , System Reset
PST9130 , System Reset
PST9131 , System Reset
PST9140 , System Reset

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PMEG3010CEH-PMEG3010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
Product profile1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers withan
integrated guard ring for stress protection, encapsulated in small and flat lead
Surface-Mounted Device (SMD) plastic packages.
1.2 Features Forward current: IF≤ 1A Reverse voltage: VR≤30V Very low forward voltage Small and flat lead SMD plastic packages
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications
1.4 Quick reference data
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEG3010CEH; PMEG3010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 02 — 22 March 2007 Product data sheet
Table 1. Product overview
PMEG3010CEH SOD123F - single
PMEG3010CEJ SOD323F SC-90 single
Table 2. Quick reference data forward current Tsp≤55°C --1 A reverse voltage - - 30 V forward voltage IF =1A [1]- 450 520 mV
NXP Semiconductors PMEG3010CEH; PMEG3010CEJ
1 A very low VF MEGA Schottky barrier rectifiers Pinning information
[1] The marking bar indicates the cathode. Ordering information Marking
Table 3. Pinning cathode [1] anode
001aab540
sym001
Table 4. Ordering information
PMEG3010CEH - plastic surface-mounted package; 2 leads SOD123F
PMEG3010CEJ SC-90 plastic surface-mounted package; 2 leads SOD323F
Table 5. Marking codes
PMEG3010CEH C8
PMEG3010CEJ EN
NXP Semiconductors PMEG3010CEH; PMEG3010CEJ
1 A very low VF MEGA Schottky barrier rectifiers Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 30 V forward current Tsp≤55 °C- 1 A
IFRM repetitive peak forward current tp≤1 ms; 0.25 A
IFSM non-repetitive peak forward
current
square wave; =8ms
PMEG3010CEH - 9 A
PMEG3010CEJ - 10 A
Ptot total power dissipation Tamb≤25°C
PMEG3010CEH [1]- 375 mW
[2]- 830 mW
PMEG3010CEJ [1]- 350 mW
[2]- 830 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]
PMEG3010CEH [2]- - 330 K/W
[3]- - 150 K/W
PMEG3010CEJ [2]- - 350 K/W
[3]- - 150 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[4]
PMEG3010CEH - - 60 K/W
PMEG3010CEJ - - 55 K/W
NXP Semiconductors PMEG3010CEH; PMEG3010CEJ
1 A very low VF MEGA Schottky barrier rectifiers Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8. Characteristics
Tamb =25 °C unless otherwise specified. forward voltage [1]=1 mA - 200 240 mV=10 mA - 260 310 mV= 100 mA - 330 390 mV= 500 mA - 400 440 mV= 700 mA - 420 450 mV=1A - 450 520 mV reverse current VR=5V - 1.2 - μA =10V - 1.8 - μA =30V - 10 50 μA diode capacitance VR=1 V; f=1 MHz - 90 100 pF
NXP Semiconductors PMEG3010CEH; PMEG3010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG3010CEH; PMEG3010CEJ
1 A very low VF MEGA Schottky barrier rectifiers Test information Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section14.
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PMEG3010CEH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG3010CEJ SOD323F

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