PMEG3002EJ ,200 mA low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
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PST9123 , System Reset
PST9123 , System Reset
PST9127 , System Reset
PST9129 , System Reset
PST9129 , System Reset
PST9130 , System Reset
PMEG3002EJ
200 mA low Vf MEGA Schottky barrier rectifier
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier withan
integrated guard ringfor stress protection, encapsulatedina SOD323F (SC-90) small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features Average forward current: IF(AV)≤ 0.2A Reverse voltage: VR≤30V Low forward voltage AEC-Q101 qualified Small and flat lead SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Ultra high-speed switching Low power consumption applications
1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG3002EJ
200 mA low VF MEGA Schottky barrier rectifier
Rev. 01 — 15 May 2009 Product data sheet
Table 1. Quick reference data =25 °C unless otherwise specified.
IF(AV) average forward current square wave;= 0.5;
f=20kHz
Tamb≤ 135°C [1]- - 0.2 A
Tsp≤ 145°C - - 0.2 A reverse voltage - - 30 V forward voltage IF= 0.2A - 420 480 mV reverse current VR =30V - 10 40 μA
NXP Semiconductors PMEG3002EJ
200 mA low VF MEGA Schottky barrier rectifier Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking Limiting values
Table 2. Pinning cathode [1] anode
sym001
Table 3. Ordering informationPMEG3002EJ SC-90 plastic surface-mounted package; 2 leads SOD323F
Table 4. Marking codesPMEG3002EJ 1M
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage Tj =25°C - 30 V
IF(AV) average forward current square wave;= 0.5;
f=20kHz
Tamb≤ 135°C [1]- 0.2 A
Tsp≤ 145°C - 0.2 A
IFRM repetitive peak forward
current≤1 ms; 0.25 2.6 A
IFSM non-repetitive peak
forward current
square wave; =8ms
[2]- 2.75 A
Ptot total power dissipation Tamb≤25°C [3][4]- 385 mW
[3][5]- 695 mW
[3][1]- 1045 mW
NXP Semiconductors PMEG3002EJ
200 mA low VF MEGA Schottky barrier rectifier[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj =25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab. junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2]
[3]- - 325 K/W
[4]- - 180 K/W
[5]- - 120 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[6] --25 K/W
NXP Semiconductors PMEG3002EJ
200 mA low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG3002EJ
200 mA low VF MEGA Schottky barrier rectifier Characteristics[1] When switched from IF=10 mA to IR=10 mA; RL= 100 Ω; measured at IR=1 mA.
Table 7. Characteristics =25 °C unless otherwise specified. forward voltage IF= 0.1 mA - 130 190 mV=1 mA - 190 250 mV=10 mA - 250 300 mV= 100 mA - 355 400 mV= 200 mA - 420 480 mV reverse current VR=10V - 2.5 10 μA =30V - 10 40 μA diode capacitance f=1MHz=1V - 18 - pF=10V -7 -pF
trr reverse recovery time [1] -5 -ns
NXP Semiconductors PMEG3002EJ
200 mA low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG3002EJ
200 mA low VF MEGA Schottky barrier rectifier
