PMEG2020EH ,20 V, 2 A very low V_F MEGA Schottky barrier rectifiersapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PMEG2020EJ ,PMEG2020EJ; 20 V, 2 A very low Vf MEGA Schottky barrier rectifier in SOD323F packageThermal characteristicsSymbol Parameter Conditions Min Typ Max UnitR thermal resistance from in fre ..
PMEG3002AEB ,Low VF MEGA Schottky barrier diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PMEG3002EJ ,200 mA low Vf MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG3005AEA ,Very low VF MEGA Schottky barrier rectifiersLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PMEG3005AEV ,PMEG2005AEV; PMEG3005AEV; PMEG4005AEV; Very low Vf MEGA Schottky barrier rectifiersLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PST9121 , System Reset
PST9123 , System Reset
PST9123 , System Reset
PST9127 , System Reset
PST9129 , System Reset
PST9129 , System Reset
PMEG2020EH-PMEG2020EJ
20 V, 2 A very low V_F MEGA Schottky barrier rectifiers
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead Surface
Mounted Device (SMD) plastic packages.
1.2 Features Forward current: 2A Reverse voltage: 20V Very low forward voltage Small and flat lead SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PMEG2020EH; PMEG2020EJ
20 V, 2 A very low VF MEGA Schottky barrier rectifiers
Rev. 04 — 15 January 2010 Product data sheet
Table 1. Product overviewPMEG2020EH SOD123F - single diode
PMEG2020EJ SOD323F SC-90 single diode
Table 2. Quick reference data forward current Tsp≤55°C --2 A reverse voltage - - 20 V forward voltage IF =2A [1]- 450 525 mV
NXP Semiconductors PMEG2020EH; PMEG2020EJ
20 V, 2 A very low VF MEGA Schottky barrier rectifiers Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking
Table 3. Pinning cathode [1] anode
001aab540
Table 4. Ordering informationPMEG2020EH - plastic surface mounted package; 2 leads SOD123F
PMEG2020EJ SC-90 plastic surface mounted package; 2 leads SOD323F
Table 5. Marking codesPMEG2020EH A6
PMEG2020EJ CA
NXP Semiconductors PMEG2020EH; PMEG2020EJ
20 V, 2 A very low VF MEGA Schottky barrier rectifiers Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
Thermal characteristics[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
[4] Soldering point of cathode tab.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 20 V forward current Tsp≤55 °C- 2 A
IFRM repetitive peak forward current tp≤1 ms; δ≤ 0.5 - 7 A
IFSM non-repetitive peak forward
current=8 ms; square
wave A
Ptot total power dissipation Tamb≤25°C
PMEG2020EH [1]- 375 mW
[2]- 830 mW
PMEG2020EJ [1]- 360 mW
[2]- 830 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
PMEG2020EH [1][2]- - 330 K/W
[1][3]- - 150 K/W
PMEG2020EJ [1][2]- - 350 K/W
[1][3]- - 150 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[4]
PMEG2020EH - - 60 K/W
PMEG2020EJ - - 55 K/W
NXP Semiconductors PMEG2020EH; PMEG2020EJ
20 V, 2 A very low VF MEGA Schottky barrier rectifiers Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified. forward voltage [1]= 0.01A - 200 220 mV= 0.1A - 260 290 mV=1A - 370 430 mV=2A - 450 525 mV reverse current=5V - 15 50 μA =10V - 20 80 μA=20V - 45 200 μA diode
capacitance=5 V; f=1 MHz - 5060pF
NXP Semiconductors PMEG2020EH; PMEG2020EJ
20 V, 2 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG2020EH; PMEG2020EJ
20 V, 2 A very low VF MEGA Schottky barrier rectifiers Package outline Packing information[1] For further information and the availability of packing methods, see Section13.
Table 9. Packing methodsThe -xxx numbers are the last three digits of the 12NC ordering code.[1]
PMEG2020EH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG2020EJ SOD323F
