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Partno	Mfg	Dc	Qty	Available	Descript
PMEG2015EH	NXP	N/a	12000	avai	20 V, 1.5 A very low Vf MEGA Schottky barrier rectifiers
PMEG2015EJ	NXP/PHILIPS	N/a	9000	avai	20 V, 1.5 A very low V_F MEGA Schottky barrier rectifiers

PMEG2015EH ,20 V, 1.5 A very low Vf MEGA Schottky barrier rectifiersapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PMEG2015EJ ,20 V, 1.5 A very low V_F MEGA Schottky barrier rectifiers
PMEG2015EJ ,20 V, 1.5 A very low V_F MEGA Schottky barrier rectifiersLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG2020EH ,20 V, 2 A very low V_F MEGA Schottky barrier rectifiersapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PMEG2020EJ ,PMEG2020EJ; 20 V, 2 A very low Vf MEGA Schottky barrier rectifier in SOD323F packageThermal characteristicsSymbol Parameter Conditions Min Typ Max UnitR thermal resistance from in fre ..
PMEG3002AEB ,Low VF MEGA Schottky barrier diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PST9121 , System Reset
PST9123 , System Reset
PST9123 , System Reset
PST9127 , System Reset
PST9129 , System Reset
PST9129 , System Reset

PMEG2015EH-PMEG2015EJ
20 V, 1.5 A very low V_F MEGA Schottky barrier rectifiers
Product profile1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection encapsulated in small and flat SMD plastic
packages.
1.2 Features Forward current: ≤ 1.5A Reverse voltage: ≤20V Very low forward voltage Small and flat lead SMD plastic packages
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Inverse polarity protection Low and medium power general applications
1.4 Quick reference data
[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers
Rev. 03 — 15 January 2010 Product data sheet
Table 1. Product overview
PMEG2015EH SOD123F - single diode
PMEG2015EJ SOD323F SC-90 single diode
Table 2. Quick reference data forward current Tsp≤55°C --1.5 A reverse voltage - - 20 V forward voltage IF =1.5A [1]- 560 660 mV
NXP Semiconductors PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers Pinning information
[1] The marking bar indicates the cathode. Ordering information Marking Limiting values
Table 3. Pinning cathode [1] anode
001aab540
Table 4. Ordering information
PMEG2015EH - plastic surface mounted package; 2 leads SOD123F
PMEG2015EJ SC-90 plastic surface mounted package; 2 leads SOD323F
Table 5. Marking codes
PMEG2015EH AD
PMEG2015EJ EL
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 20 V forward current Tsp≤55 °C- 1.5 A
IFRM repetitive peak forward current tp≤1 ms; δ≤ 0.25 - 5.5 A
IFSM non-repetitive peak forward
current
square wave; =8 ms
[1] -9 A
Ptot total power dissipation Tamb≤25°C
PMEG2015EH [1]- 375 mW
[2]- 830 mW
PMEG2015EJ [1]- 360 mW
[2]- 830 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
NXP Semiconductors PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating are available on request.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. Characteristics
Tstg storage temperature −65 +150 °C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 7. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air
PMEG2015EH [1][2] -- 330 K/W
[2][3] -- 150 K/W
PMEG2015EJ [1][2] -- 350 K/W
[2][3] -- 150 K/W
Rth(j-sp) thermal resistance from
junction to solder point
PMEG2015EH - - 60 K/W
PMEG2015EJ - - 55 K/W
Table 8. Characteristics
Tamb =25 °C unless otherwise specified. forward voltage IF =10mA [1]- 240 270 mV= 100 mA [1]- 300 350 mV= 500 mA [1]- 400 460 mV =1A [1]- 480 550 mV =1.5A [1]- 560 660 mV reverse current VR =5V - 5 10 μA =8V - 7 20 μA =10V - 8 30 μA =15V - 10 50 μA =20V - 15 70 μA
NXP Semiconductors PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers Package outline Packing information
[1] For further information and the availability of packing methods, see Section13.
10. Soldering
Table 9. Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.[1]
PMEG2015EH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG2015EJ SOD323F
NXP Semiconductors PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers

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