PMEG2010EH ,1 A very low VF MEGA Schottky barrier rectifiersLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG2010EH ,1 A very low VF MEGA Schottky barrier rectifiersGeneral descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers w ..
PMEG2010EJ ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG2010ER ,1 A low VF MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG2010ER ,1 A low VF MEGA Schottky barrier rectifierLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG2010ET ,1 A very low VF MEGA Schottky barrier rectifiersApplicationsn Low voltage rectificationn High efficiency DC-to-DC conversionn Switch mode power suppl ..
PST9119 , System Reset
PST9121 , System Reset
PST9123 , System Reset
PST9123 , System Reset
PST9127 , System Reset
PST9129 , System Reset
PMEG2010EH
1 A very low VF MEGA Schottky barrier rectifiers
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers.
1.2 Features
1.3 Applications
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEGxx10EH/EJ series
1 A very low VF MEGA Schottky barrier rectifiers
Table 1: Product overviewPMEG2010EH SOD123F - single diode
PMEG3010EH
PMEG4010EH
PMEG2010EJ SOD323F SC-90 single diode
PMEG3010EJ
PMEG4010EJ Forward current: ≤ 1A � Very low forward voltage Low voltage rectification � Inverse polarity protection High efficiency DC-to-DC conversion � Low power consumption applications
Table 2: Quick reference data forward current Tsp≤55°C --1 A reverse voltage
PMEG2010EH, PMEG2010EJ - - 20 V
PMEG3010EH, PMEG3010EJ - - 30 V
PMEG4010EH, PMEG4010EJ - - 40 V forward voltage IF= 1000 mA [1]
PMEG2010EH, PMEG2010EJ - 420 500 mV
PMEG3010EH, PMEG3010EJ - 450 560 mV
PMEG4010EH, PMEG4010EJ - 540 640 mV
Philips Semiconductors PMEGxx10EH/EJ series Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking
Table 3: Pinning cathode [1] anode
001aab540
sym001
Table 4: Ordering informationPMEG2010EH - plastic surface mounted package; 2 leads SOD123F
PMEG3010EH
PMEG4010EH
PMEG2010EJ SC-90 plastic surface mounted package; 2 leads SOD323F
PMEG3010EJ
PMEG4010EJ
Table 5: Marking codesPMEG2010EH A9
PMEG3010EH AA
PMEG4010EH AB
PMEG2010EJ AH
PMEG3010EJ AK
PMEG4010EJ AL
Philips Semiconductors PMEGxx10EH/EJ series Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Thermal characteristics[1] Schottky barrier rectifier thermal run-away hastobe considered,asin some applicationsthe reverse power
losses PR are a significant part of the total power losses. Nomograms for determining the reverse power
losses PR and IF(AV) rating are available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage
PMEG2010EH, PMEG2010EJ - 20 V
PMEG3010EH, PMEG3010EJ - 30 V
PMEG4010EH, PMEG4010EJ - 40 V forward current Tsp≤55 °C- 1 A
IFRM repetitive peak forward current tp≤1 ms;δ≤ 0.25 - 7 A
IFSM non-repetitive peak forward current square wave; =8ms A
Ptot total power dissipation Tamb≤25°C
SOD123F [1]- 375 mW
[2]- 830 mW
SOD323F [1]- 350 mW
[2]- 830 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7: Thermal characteristicsRth(j-a) thermal resistance from junction
to ambient
in free air [1]
SOD123F [2]- - 330 K/W
[3]- - 150 K/W
SOD323F [2]- - 350 K/W
[3]- - 150 K/W
Rth(j-sp) thermal resistance from junction
to solder point
SOD123F - - 60 K/W
SOD323F - - 55 K/W
Philips Semiconductors PMEGxx10EH/EJ series Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8: CharacteristicsTamb =25 °C unless otherwise specified. forward voltage [1]
PMEG2010EH, PMEG2010EJ IF= 0.1 mA - 90 130 mV=1 mA - 150 190 mV=10 mA - 210 240 mV= 100 mA - 280 330 mV= 500 mA - 355 390 mV= 1000 mA - 420 500 mV
PMEG3010EH, PMEG3010EJ IF= 0.1 mA - 90 130 mV=1 mA - 150 200 mV=10 mA - 215 250 mV= 100 mA - 285 340 mV= 500 mA - 380 430 mV= 1000 mA - 450 560 mV
PMEG4010EH, PMEG4010EJ IF= 0.1 mA - 95 130 mV=1 mA - 155 210 mV=10 mA - 220 270 mV= 100 mA - 295 350 mV= 500 mA - 420 470 mV= 1000 mA - 540 640 mV reverse current
PMEG2010EH, PMEG2010EJ VR =10V - 15 40 μA=20V - 40 200 μA
PMEG3010EH, PMEG3010EJ VR =10V - 12 30 μA=30V - 40 150 μA
PMEG4010EH, PMEG4010EJ VR =10V - 7 20 μA=40V - 30 100 μA diode capacitance VR =1V;
f=1MHz
PMEG2010EH, PMEG2010EJ - 66 80 pF
PMEG3010EH, PMEG3010EJ - 55 70 pF
PMEG4010EH, PMEG4010EJ - 43 50 pF
Philips Semiconductors PMEGxx10EH/EJ series
Philips Semiconductors PMEGxx10EH/EJ series
