PMEG2010EJ ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG2010ER ,1 A low VF MEGA Schottky barrier rectifierapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
PMEG2010ER ,1 A low VF MEGA Schottky barrier rectifierLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG2010ET ,1 A very low VF MEGA Schottky barrier rectifiersApplicationsn Low voltage rectificationn High efficiency DC-to-DC conversionn Switch mode power suppl ..
PMEG2010EV ,Low VF MEGA Schottky barrier diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134)SYMBOL PARAMETER CO ..
PMEG2015EA ,Low VF (MEGA) Schottky barrier diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PST9119 , System Reset
PST9121 , System Reset
PST9123 , System Reset
PST9123 , System Reset
PST9127 , System Reset
PST9129 , System Reset
PMEG2010EH-PMEG2010EJ-PMEG2010ET
1 A very low VF MEGA Schottky barrier rectifiers
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers withan
integrated guard ring for stress protection, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
1.2 Features Forward current: IF≤ 1A Reverse voltage: VR≤20V Very low forward voltage Small SMD plastic packages
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEG2010EH; PMEG2010EJ;
PMEG2010ET
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 04 — 20 March 2007 Product data sheet
Table 1. Product overviewPMEG2010EH SOD123F - - single
PMEG2010EJ SOD323F SC-90 - single
PMEG2010ET SOT23 - TO-236AB single
Table 2. Quick reference data forward current Tsp≤55°C --1 A reverse voltage - - 20 V forward voltage IF= 1000 mA [1]- 420 500 mV
NXP Semiconductors PMEG2010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
SOD123F; SOD323F cathode [1] anode
SOT23 anode n.c. cathode
001aab540
sym001
006aaa436
Table 4. Ordering informationPMEG2010EH - plastic surface-mounted package; 2 leads SOD123F
PMEG2010EJ SC-90 plastic surface-mounted package; 2 leads SOD323F
PMEG2010ET - plastic surface-mounted package; 3 leads SOT23
Table 5. Marking codesPMEG2010EH A9
PMEG2010EJ AH
PMEG2010ET *AU
NXP Semiconductors PMEG2010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 20 V forward current Tsp≤55 °C- 1 A
IFRM repetitive peak forward
current≤1 ms;δ≤ 0.25
PMEG2010EH - 7 A
PMEG2010EJ - 7 A
PMEG2010ET - 5 A
IFSM non-repetitive peak forward
current
square wave; =8ms A
Ptot total power dissipation Tamb≤25°C
PMEG2010EH [1]- 375 mW
[2]- 830 mW
PMEG2010EJ [1]- 350 mW
[2]- 830 mW
PMEG2010ET [1]- 280 mW
[2]- 420 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMEG2010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Thermal characteristics[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]
PMEG2010EH [2]- - 330 K/W
[3]- - 150 K/W
PMEG2010EJ [2]- - 350 K/W
[3]- - 150 K/W
PMEG2010ET [2]- - 440 K/W
[3]- - 300 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[4]
PMEG2010EH - - 60 K/W
PMEG2010EJ - - 55 K/W
PMEG2010ET - - 120 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified. forward voltage [1]= 0.1 mA - 90 130 mV=1 mA - 150 190 mV=10 mA - 210 240 mV= 100 mA - 280 330 mV= 500 mA - 355 390 mV= 1000 mA - 420 500 mV reverse current VR =10V - 15 40 μA=20V - 40 200 μA diode capacitance VR =1V;
f=1MHz 6680pF
NXP Semiconductors PMEG2010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors PMEG2010EH/EJ/ET
1 A very low VF MEGA Schottky barrier rectifiers Test information Package outline
