PMEG3010BEV ,1 A very low Vf MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) packageLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PMEG3010CEH ,1 A very low VF MEGA Schottky barrier rectifiersThermal characteristicsSymbol Parameter Conditions Min Typ Max Unit[1]R thermal resistance from in ..
PMEG3010CEJ ,1 A very low VF MEGA Schottky barrier rectifiersLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMEG3010CEJ ,1 A very low VF MEGA Schottky barrier rectifiersapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PMEG3010EB ,1 A very low VF MEGA Schottky barrier rectifierapplications Switch mode power supply1.4 Quick reference data Table 1. Quick reference dataSymbol ..
PMEG3010EH ,1 A very low VF MEGA Schottky barrier rectifiersApplicationsn Low voltage rectificationn High efficiency DC-to-DC conversionn Switch mode power suppl ..
PST9127 , System Reset
PST9129 , System Reset
PST9129 , System Reset
PST9130 , System Reset
PST9131 , System Reset
PST9140 , System Reset
PMEG2010BEA-PMEG3010BEV
1 A very low VF MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES Forward current: 1 A Reverse voltages: 20 V, 30 V, 40 V Very low forward voltage Ultra small and very small plastic SMD package Power dissipation comparable to SOT23.
APPLICATIONS High efficiency DC-to-DC conversion Voltage clamping Protection circuits Low voltage rectification Blocking diodes Low power consumption applications.
DESCRIPTIONPlanar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
MARKING
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Refer to SOD323 (SC-76) and SOT666 standard mounting conditions. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
Notes Refer to SOD323 (SC-76) standard mounting conditions. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. Solder point of cathode tab. Refer to SOT666 standard mounting conditions. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
NXP Semiconductors Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
