PMEG2005EB ,Low VF MEGA Schottky barrier diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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PMEG2005EB
Low VF MEGA Schottky barrier diode
NXP Semiconductors Product data sheet
Low VF MEGA Schottky barrier diode PMEG2005EB
FEATURES Forward current: 0.5 A Reverse voltage: 20 V Very low forward voltage Guard ring protected Ultra small SMD package.
APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Low current rectification Low power consumption applications (e.g. handheld
devices).
DESCRIPTIONPlanar Maximum Efficiency General Application (MEGA)
Schottky barrier diode, encapsulated in a SOD523
(SC-79) ultra small SMD plastic package.
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors Product data sheet
Low VF MEGA Schottky barrier diode PMEG2005EB
ELECTRICAL CHARACTERISTICSTamb = 25 °C; unless otherwise specified.
Note Pulsed test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note Refer to SOD523 (SC-79) standard mounting conditions.
NXP Semiconductors Product data sheet
Low VF MEGA Schottky barrier diode PMEG2005EB
Product data sheet PMEG2005EB
NXP Semiconductors Product data sheet
Low VF MEGA Schottky barrier diode PMEG2005EB
DATA SHEET STATUS
Notes Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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