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PMEG1030EJ
10 V, 3 A ultra low V_F MEGA Schottky barrier rectifiers
Product profile1.1 General descriptionPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection encapsulated in small SMD plastic packages.
1.2 Features Forward current: 3 A Reverse voltage: 10 V Ultra low forward voltage Small and flat lead SMD package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switched-mode power supply Inverse polarity protection Low power consumption applications
1.4 Quick reference data[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PMEG1030EH; PMEG1030EJ V, 3 A ultra low VF MEGA Schottky barrier rectifiers
Rev. 04 — 15 January 2010 Product data sheet
Table 1. Product overviewPMEG1030EH SOD123F - single isolated diodes
PMEG1030EJ SOD323F SC-90 single isolated diodes
Table 2. Quick reference data forward current Tsp ≤ 55 °C --3 A reverse voltage - - 10 V forward voltage IF =3A [1]- 390 530 mV
NXP Semiconductors PMEG1030EH; PMEG1030EJ V, 3 A ultra low VF MEGA Schottky barrier rectifiers Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking
Table 3. Pinning cathode [1] anode
001aab540
Table 4. Ordering informationPMEG1030EH - plastic surface mounted package; 2 leads SOD123F
PMEG1030EJ SC-90 plastic surface mounted package; 2 leads SOD323F
Table 5. Marking codesPMEG1030EH AC
PMEG1030EJ E7
NXP Semiconductors PMEG1030EH; PMEG1030EJ V, 3 A ultra low VF MEGA Schottky barrier rectifiers Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 10 V forward current Tsp ≤ 55 °C- 3 A
IFRM repetitive peak forward
current≤1 ms; δ≤ 0.25 - 5.5 A
IFSM non-repetitive peak forward
current=8 ms; square
wave
[1] -9 A
Ptot total power dissipation Tamb≤ 25 °C
PMEG1030EH [1]- 375 mW
[2]- 830 mW
PMEG1030EJ [1]- 360 mW
[2]- 830 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
PMEG1030EH [1][2] -- 330 K/W
[2][3] -- 150 K/W
PMEG1030EJ [1][2] -- 350 K/W
[2][3] -- 150 K/W
Rth(j-sp) thermal resistance from
junction to solder point
PMEG1030EH - - 60 K/W
PMEG1030EJ - - 55 K/W
NXP Semiconductors PMEG1030EH; PMEG1030EJ V, 3 A ultra low VF MEGA Schottky barrier rectifiers Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified. forward voltage [1]= 0.01A - 100 130 mV= 0.1A - 170 200 mV= 1 A - 280 350 mV= 3 A - 390 530 mV reverse current VR=5V - 0.55 2 mA =8V - 0.8 2.5 mA =10V - 1 3 mA diode capacitance VR =1V; f= 1MHz - 70 85 pF
NXP Semiconductors PMEG1030EH; PMEG1030EJ V, 3 A ultra low VF MEGA Schottky barrier rectifiers Package outline Packing information
Table 9. Packing methodsThe -xxx numbers are the last three digits of the 12NC ordering code.[1]
PMEG1030EH SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
PMEG1030EJ SOD323F 4 mm pitch, 8 mm tape and reel -115 -135
NXP Semiconductors PMEG1030EH; PMEG1030EJ V, 3 A ultra low VF MEGA Schottky barrier rectifiers
10. Soldering
