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Partno	Mfg	Dc	Qty	Available	Descript
PMEG1020EA	NXP	N/a	1800	avai	2 A ultra low VF MEGA Schottky barrier rectifier

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PMEG1020EA
2 A ultra low VF MEGA Schottky barrier rectifier
Product profile1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier withan
integrated guard ring for stress protection, encapsulated in SOD323 (SC-76) very small
Surface-Mounted Device (SMD) plastic package.
1.2 Features Forward current: IF≤ 2A Reverse voltage: VR≤10V Ultra low forward voltage Very small SMD plastic package
1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.4 Quick reference data
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMEG1020EA
2 A ultra low VF MEGA Schottky barrier rectifier
Rev. 04 — 30 December 2008 Product data sheet
Table 1. Quick reference data forward current Tsp≤55°C --2 A reverse voltage - - 10 V forward voltage IF =1A [1]- 280 350 mV
NXP Semiconductors PMEG1020EA
2 A ultra low VF MEGA Schottky barrier rectifier Pinning information
[1] The marking bar indicates the cathode. Ordering information Marking Limiting values
Table 2. Pinning cathode [1] anode
sym001
Table 3. Ordering information
PMEG1020EA SC-76 plastic surface-mounted package; 2 leads SOD323
Table 4. Marking codes
PMEG1020EA E2
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). reverse voltage - 10 V forward current Tsp≤55 °C- 2 A
IFRM repetitive peak forward
current≤1 ms;δ≤ 0.5 - 3.2 A
IFSM non-repetitive peak
forward current
square wave; =8ms A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMEG1020EA
2 A ultra low VF MEGA Schottky barrier rectifier Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with copper clad 10×10 mm.
[3] Soldering point of cathode tab. Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
[2] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 450 K/W
[2]- - 210 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[3] --90 K/W
Table 7. Characteristics
Tamb =25 °C unless otherwise specified. forward voltage [1]= 0.01A - 100 130 mV= 0.1A - 170 200 mV=1A - 280 350 mV=2A - 350 460 mV reverse current [2]=5V - 0.7 2 mA=8V - 1 2.5 mA=10V - 1.2 3 mA diode capacitance VR=5 V; f=1 MHz - 37 45 pF
NXP Semiconductors PMEG1020EA
2 A ultra low VF MEGA Schottky barrier rectifier
NXP Semiconductors PMEG1020EA
2 A ultra low VF MEGA Schottky barrier rectifier Test information Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section14.
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PMEG1020EA SOD323 4 mm pitch, 8 mm tape and reel -115 -135
NXP Semiconductors PMEG1020EA
2 A ultra low VF MEGA Schottky barrier rectifier
11. Soldering

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