PMD9001D Fast Delivery |IC PHOENIX CO.,LIMITED

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PMD9001D
MOSFET driver
Product proﬁle1.1 General description
NPN Resistor-Equipped T ransistor (RET), NPN general-purpose transistor and
high-speed switching diode connected in totem pole conﬁguration in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
1.2 Features Two transistors and one high-speed switching diode as driver Totem pole conﬁguration Application-optimized pinout Internal connections to minimize layout effort Space-saving solution Reduces component count
1.3 Applications MOSFET driver
1.4 Quick reference data
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PMD9001D
MOSFET driver
Rev. 01 — 16 November 2006 Product data sheet
Table 1. Quick reference data
Per transistor collector current - - 0.1 A
Transistor2 (TR2)
VCEO collector-emitter voltage open base - - 45 V
ICM peak collector current single pulse;≤ 1ms - 0.2 A
Diode (D1) forward current - - −0.2 A forward voltage IF= −200 mA [1] -- −1.1 V
NXP Semiconductors PMD9001D
MOSFET driver Pinning information Ordering information Marking Limiting values
Table 2. Pinning OUT output GND ground IN input RC collector resistor RC collector resistor VCC supply voltage
006aaa6582156
Table 3. Ordering information
PMD9001D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
PMD9001D 9B
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Transistor1 (TR1)
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V collector current - 0.1 A
ICM peak collector current single pulse;≤ 1ms 0.1 A input voltage
positive - +12 V
negative - −10 V
Transistor2 (TR2)
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
NXP Semiconductors PMD9001D
MOSFET driver
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint. collector current - 0.1 A
ICM peak collector current single pulse;≤ 1ms 0.2 A
IBM peak base current single pulse;≤ 1ms 0.2 A
Ptot total power dissipation Tamb≤25°C [1]- 290 mW
[2]- 325 mW
[3]- 400 mW
Diode (D1) forward current - −0.2 A
IFRM repetitive peak forward current tp≤1 ms; δ≤ 0.25 - −0.6 A
IFSM non-repetitive peak forward
current
square wave =1 μs- −9A= 100 μs- −3A =10ms - −1.7 A
Device junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PMD9001D
MOSFET driver Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristics
Transistor2 (TR2)
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 430 K/W
[2]- - 385 K/W
[3]- - 312 K/W
NXP Semiconductors PMD9001D
MOSFET driver
NXP Semiconductors PMD9001D
MOSFET driver Characteristics
Table 7. Characteristics
Tamb =25 °C unless otherwise speciﬁed.
Transistor1 (TR1)
ICBO collector-base cut-off
current
VCB=50 V; IE=0A - - 100 nA
ICEO collector-emitter cut-off
current
VCE=30 V; IE =0A - - 1 μA
VCE=30 V; IE =0A;= 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IE =0A - - 2 mA
hFE DC current gain VCE =5V; IC =20mA 30 55 -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - 60 150 mV
VI(off) off-state input voltage VCE =5V; IC= 0.1 mA - 1.1 0.5 V
VI(on) on-state input voltage VCE= 0.3 V; IC =20mA 2 1.6 - V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
Transistor2 (TR2)
ICBO collector-base cut-off
current
VCB=30 V; IE =0A - - 15 nA
VCB=30 V; IE =0A;= 150°C 5 μA
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - 60 200 mV= 100 mA; IB=5 mA - 200 400 mV= 200 mA;IB=20 mA - 340 500 mV
NXP Semiconductors PMD9001D
MOSFET driver
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
VBEsat base-emitter saturation
voltage=10 mA; IB= 0.5 mA - 0.7 - V= 100 mA; IB=5 mA - 0.9 - V
VBE base-emitter voltage VCE =5V; IC=2 mA 610 660 710 mV
VCE =5V; IC=10 mA - - 770 mV
Diode (D1) forward voltage IF= −200 mA [1] -- −1.1 V
TR2 and D1
hFE DC current gain VCE =5V; IC=1 mA 200 290 450
VCE =5V; IC= 100 mA 95 140 -
VCE =5V; IC= 200 mA 24 35 -
Device delay time IC= 0.05 A; IB= 2.5 mA - 11 - ns rise time - 54 - ns
ton turn-on time - 65 - ns storage time - 1100- ns fall time - 207 - ns
toff turn-off time - 1307- ns
Table 7. Characteristics …continued
Tamb =25 °C unless otherwise speciﬁed.
NXP Semiconductors PMD9001D
MOSFET driver

Partno	Mfg	Dc	Qty	Available	Descript
PMD9001D	NXP	N/a	27000	avai	MOSFET driver