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Partno	Mfg	Dc	Qty	Available	Descript
PMBTA44	NXP/PHILIPS	N/a	3000	avai	400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
PMBTA44	NXP	N/a	36000	avai	400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor

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PMBTA44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
Product profile1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
1.2 Features Low current (max. 300 mA) High voltage (max. 400V) AEC-Q101 qualified
1.3 Applications LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply
1.4 Quick reference data
PMBT A44
400 V , 0.3 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 01 — 22 February 2008 Product data sheet
Table 1. Quick reference data
VCEO collector-emitter voltage open base - - 400 V collector current - - 300 mA
hFE DC current gain VCE =10V; IC =10mA 50 - 200
NXP Semiconductors PMBT A44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning base emitter collector
sym021
Table 3. Ordering information
PMBTA44 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
PMBTA44 W3*
NXP Semiconductors PMBT A44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 500 V
VCEO collector-emitter voltage open base - 400 V
VEBO emitter-base voltage open collector - 6 V collector current - 300 mA
ICM peak collector current single pulse;≤ 1ms 300 mA
IBM peak base current single pulse;≤ 1ms 100 mA
Ptot total power dissipation Tamb≤25°C [1]- 250 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMBT A44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from junctionto
ambient
in free air [1]- - 500 K/W
NXP Semiconductors PMBT A44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. Characteristics
Tamb =25 °C unless otherwise specified.
ICBO collector-basecut-off
current
VCB= 320 V; IE=0A - - 100 nA
VCB= 320 V; IE =0A;= 150°C
--10 μA
IEBO emitter-base cut-off
current
VEB =4V; IC=0A - - 100 nA
hFE DC current gain VCE =10V=10 mA 50 - 200 =50mA [1] 45 - -= 100 mA [1] 40 - -
VCEsat collector-emitter
saturation voltage=1 mA; IB= 0.1 mA - - 400 mV=10 mA; IB=1 mA - - 500 mV=50 mA; IB =5mA [1]- - 750 mV
VBEsat base-emitter
saturation voltage=10 mA; IB =1mA [1]- - 850 mV transition frequency VCE =10V; IE =10mA;= 100 MHz - - MHz collector capacitance VCB =20V;IE =ie =0A;
f=1MHz
--7 pF emitter capacitance VEB= 0.5V; =ic=0 A; f=1 MHz - 180 pF
NXP Semiconductors PMBT A44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor

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