PMBTA42 Fast Delivery |IC PHOENIX CO.,LIMITED

Home › P › P25 > PMBTA42,300 V, 100 mA NPN high-voltage transistor

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
PMBTA42	NXP/PHILIPS	N/a	3000	avai	300 V, 100 mA NPN high-voltage transistor

PMBTA42 ,300 V, 100 mA NPN high-voltage transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMBTA44 ,400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorApplicationsn LED driver for LED chain modulen LCD backlightingn High Intensity Discharge (HID) fro ..
PMBTA44 ,400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorGeneral descriptionNPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in aCEsatS ..
PMBTA56 ,PNP general purpose transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
PMBTA56 ,PNP general purpose transistorDISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA56PNP general purpose transistor1999 Apr ..
PMBTA56 ,PNP general purpose transistorAPPLICATIONS3 collector• General purpose switching and amplification, e.g.telephony and professiona ..
PST600C , System Reset Monolithic IC
PST600C , System Reset Monolithic IC
PST600C , System Reset Monolithic IC
PST600E , System Reset Monolithic IC
PST600F , System Reset Monolithic IC
PST600G , System Reset Monolithic IC

PMBTA42
300 V, 100 mA NPN high-voltage transistor
Product profile1.1 General description
NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
PNP complement: PMBTA92.
1.2 Features High voltage (max. 300V)
1.3 ApplicationsT elephony and professional communication equipment
1.4 Quick reference data Pinning information
PMBT A42
300 V, 100 mA NPN high-voltage transistor
Rev. 05 — 12 December 2008 Product data sheet
Table 1. Quick reference data
VCEO collector-emitter voltage open base - - 300 V collector current - - 100 mA
hFE DC current gain VCE =10V =1 mA 25 - - =10 mA 40 - - =30 mA 40 - -
Table 2. Pinning base emitter
3collector
NXP Semiconductors PMBTA42
300 V, 100 mA NPN high-voltage transistor Ordering information
[1] /DG: halogen-free Marking
[1] /DG: halogen-free
[2] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 3. Ordering information
PMBTA42 - plastic surface-mounted package; 3 leads SOT23
PMBTA42/DG
Table 4. Marking codes
PMBTA42 *1D
PMBTA42/DG *BV
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 300 V
VCEO collector-emitter voltage open base - 300 V
VEBO emitter-base voltage open collector - 6 V collector current - 100 mA
ICM peak collector current single pulse; ≤ 1ms
-200 mA
IBM peak base current single pulse; ≤ 1ms
-100 mA
Ptot total power dissipation Tamb≤25°C [1] -250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMBTA42
300 V, 100 mA NPN high-voltage transistor Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 500 K/W
Table 7. Characteristics
Tamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =200 V; IE=0A - - 100 nA
IEBO emitter-base cut-off
current
VEB =6 V; IC=0A - - 100 nA
hFE DC current gain VCE =10V =1 mA 25 - - =10mA 40 - - =30mA 40 - -
VCEsat collector-emitter
saturation voltage =20mA; IB=2 mA - - 500 mV
VBEsat base-emitter saturation
voltage =20mA; IB=2 mA - - 900 mV
Cre feedback capacitance VCB =20 V; IC =ic =0A; 1MHz
--3 pF transition frequency VCE =20 V; IC =10mA; 100MHz --MHz
NXP Semiconductors PMBTA42
300 V, 100 mA NPN high-voltage transistor Package outline
Fig 1. Package outline SOT23 (TO-236AB)
NXP Semiconductors PMBTA42
300 V, 100 mA NPN high-voltage transistor Packing information
[1] For further information and the availability of packing methods, see Section13.
[2] /DG: halogen-free
10. Soldering
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PMBTA42 SOT23 4 mm pitch, 8 mm tape and reel -215 -235
PMBTA42/DG
NXP Semiconductors PMBTA42
300 V, 100 mA NPN high-voltage transistor

TEL:86-533-2716050 FAX:86-533-2716790