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PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
Product profile1.1 General descriptionNPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
1.2 Features General-purpose double transistor Board-space reduction
1.3 Applications General-purpose switching and amplification
1.4 Quick reference data
PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
Rev. 01 — 12 May 2009 Product data sheet
Table 1. Product overviewPMBT3946YPN SOT363 SC-88 PMBT3904YS PMBT3906YS very small
Table 2. Quick reference data
Per transistor; for the PNP transistor with negative polarityVCEO collector-emitter voltage open base - - 40 V collector current - - 200 mA
hFE DC current gain VCE =1V; =10mA
100 180 300
NXP Semiconductors PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
sym0191 36
TR1
TR2
Table 4. Ordering informationPMBT3946YPN SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codesPMBT3946YPN BB*
NXP Semiconductors PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
TR1 (NPN)VCBO collector-base voltage open emitter - 60 V
TR2 (PNP)VCBO collector-base voltage open emitter - −40 V
Per transistor; for the PNP transistor with negative polarityVCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 6 V collector current - 200 mA
ICM peak collector current single pulse;≤ 1ms 200 mA
IBM peak base current single pulse;≤ 1ms 100 mA
Ptot total power dissipation Tamb≤25°C [1]- 230 mW
Per devicePtot total power dissipation Tamb≤25°C [1]- 350 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 543 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 290 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 357 K/W
NXP Semiconductors PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
TR1 (NPN)ICBO collector-base cut-off
current
VCB =30V; IE=0A --50 nA
IEBO emitter-base cut-off
current
VEB =6V; IC=0A --50 nA
hFE DC current gain VCE =1V -= 0.1 mA 60 180 -=1 mA 80 180 -=10 mA 100 180 300=50 mA 60 105 -= 100 mA 30 50 -
VCEsat collector-emitter
saturation voltage=10 mA; IB=1 mA - 75 200 mV=50 mA; IB=5 mA - 120 300 mV
VBEsat base-emitter saturation
voltage=10 mA; IB=1 mA 650 750 850 mV=50 mA; IB=5 mA - 850 950 mV transition frequency VCE =20V; IC =10mA;= 100 MHz
300 - - MHz collector capacitance VCB =5V; IE =ie =0A;
f=1MHz
--4 pF emitter capacitance VBE= 0.5 V; IC =ic =0A;
f=1MHz
--8 pF noise figure VCE =5V; IC= 100 μA; =1kΩ;=10Hzto 15.7 kHz
--5 dB delay time VCC =3V; IC =10mA;
IBon=1 mA; IBoff= −1mA
--35 ns rise time - - 35 ns
ton turn-on time - - 70 ns storage time - - 200 ns fall time - - 50 ns
toff turn-off time - - 250 ns
NXP Semiconductors PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
TR2 (PNP)ICBO collector-base cut-off
current
VCB= −30 V; IE =0A - - −50 nA
IEBO emitter-base cut-off
current
VEB=−6 V; IC =0A - - −50 nA
hFE DC current gain VCE= −1V= −0.1 mA 60 180 -=−1 mA 80 180 -= −10 mA 100 180 300= −50 mA 60 130 -= −100 mA 30 50 -
VCEsat collector-emitter
saturation voltage= −10 mA; IB= −1mA - −100 −250 mV= −50 mA; IB= −5mA - −165 −400 mV
VBEsat base-emitter saturation
voltage= −10 mA; IB= −1mA - −750 −850 mV= −50 mA; IB= −5mA - −850 −950 mV transition frequency VCE= −20 V; IC= −10 mA;= 100 MHz
250 - - MHz collector capacitance VCB=−5 V; IE =ie =0A;
f=1MHz - 4.5 pF emitter capacitance VCB= −0.5 V; IC =ic =0A;
f=1MHz
--10 pF noise figure VCE=−5 V; IC= −100 μA; =1kΩ;=10Hzto 15.7 kHz
--4 dB delay time VCC=−3 V; IC= −10 mA;
IBon=−1 mA; IBoff =1mA
--35 ns rise time - - 35 ns
ton turn-on time - - 70 ns storage time - - 225 ns fall time - - 75 ns
toff turn-off time - - 300 ns
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified.
NXP Semiconductors PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
NXP Semiconductors PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
