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Partno	Mfg	Dc	Qty	Available	Descript
PMBT3906YS	NXP	N/a	21000	avai	40 V, 200 mA PNP/PNP general-purpose double transistor

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PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
Product profile1.1 General description
PNP/PNP general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
1.2 Features General-purpose double transistor Board-space reduction AEC-Q101 qualified
1.3 Applications General-purpose switching and amplification
1.4 Quick reference data
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
Rev. 02 — 13 May 2009 Product data sheet
Table 1. Product overview
PMBT3906YS SOT363 SC-88 PMBT3904YS PMBT3946YPN very small
Table 2. Quick reference data
Per transistor
VCEO collector-emitter voltage open base - - −40 V collector current - - −200 mA
hFE DC current gain VCE= −1V;= −10 mA
100 180 300
NXP Semiconductors PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
sym0181 36
TR1
TR2
Table 4. Ordering information
PMBT3906YS SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codes
PMBT3906YS BD*
NXP Semiconductors PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −6V collector current - −200 mA
ICM peak collector current single pulse;≤ 1ms −200 mA
IBM peak base current single pulse;≤ 1ms −100 mA
Ptot total power dissipation Tamb≤25°C [1]- 230 mW
Per device
Ptot total power dissipation Tamb≤25°C [1]- 350 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 7. Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 543 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 290 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 357 K/W
NXP Semiconductors PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor Characteristics
Table 8. Characteristics
Tamb =25 °C unless otherwise specified.
Per transistor
ICBO collector-base cut-off
current
VCB= −30 V; IE =0A - - −50 nA
IEBO emitter-base cut-off
current
VEB=−6 V; IC =0A - - −50 nA
hFE DC current gain VCE= −1V= −0.1 mA 60 180 -=−1 mA 80 180 -= −10 mA 100 180 300= −50 mA 60 130 -= −100 mA 30 50 -
VCEsat collector-emitter
saturation voltage= −10 mA;= −1mA −100 −250 mV= −50 mA;= −5mA −165 −400 mV
VBEsat base-emitter saturation
voltage= −10 mA;= −1mA −750 −850 mV= −50 mA;= −5mA −850 −950 mV transition frequency VCE= −20V;= −10 mA;= 100 MHz
250 - - MHz collector capacitance VCB= −5V; =ie =0A;
f=1MHz - 4.5 pF emitter capacitance VBE= −0.5V; =ic =0A;
f=1MHz
--10 pF noise figure VCE= −5V;= −100 μA; =1kΩ;=10Hzto 15.7 kHz
--4 dB delay time VCC= −3V;= −10 mA;
IBon=−1 mA;
IBoff =1mA
--35 ns rise time - - 35 ns
ton turn-on time - - 70 ns storage time - - 225 ns fall time - - 75 ns
toff turn-off time - - 300 ns
NXP Semiconductors PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor

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