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Partno	Mfg	Dc	Qty	Available	Descript
PMBT2222	NXP	N/a	2850	avai	NPN switching transistors
PMBT2222A	NXP	N/a	300000	avai	NPN switching transistors

PMBT2222A ,NPN switching transistorsThermal characteristics Table 7.
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PMBT2907 ,PNP switching transistorsFEATURES PINNING• High current (max. 600 mA)PIN DESCRIPTION• Low voltage (max. 60 V).1 base2 emitter
PMBT2907A ,PNP switching transistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PMBT3904 ,NPN switching transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PMBT3904D ,NPN switching double transistor
PST597 , System Reset
PST600C , System Reset Monolithic IC
PST600C , System Reset Monolithic IC
PST600C , System Reset Monolithic IC
PST600E , System Reset Monolithic IC
PST600F , System Reset Monolithic IC

PMBT2222-PMBT2222A
NPN switching transistors
1. Product profile
1.1 General description
NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)
plastic package.
1.2 Features and benefits High current (max. 600 mA) Low voltage (max. 40V)
1.3 Applications Switching and linear amplification
1.4 Quick reference data
[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PMBT2222; PMBT2222A
NPN switching transistors
Rev. 6 — 12 November 2010 Product data sheet
Table 1. Product overview
PMBT2222 SOT23 TO-236AB PMBT2907
PMBT2222A PMBT2907A
Table 2. Quick reference data
VCEO collector-emitter voltage open base
PMBT2222 - - 30 V
PMBT2222A - - 40 V collector current - - 600 mA
hFE DC current gain VCE =10V; IC= 150 mA
[1] 100 - 300
PMBT2222 VCE =10V; = 500 mA
[1] 30 - -
PMBT2222A VCE =10V; = 500 mA
[1] 40 - -
NXP Semiconductors PMBT2222; PMBT2222A
NPN switching transistors
2. Pinning information
3. Ordering information
4. Marking
[1]*= placeholder for manufacturing site code
Table 3. Pinning
1base
2emitter collector
Table 4. Ordering information
PMBT2222 - plastic surface-mounted package; 3 leads SOT23
PMBT2222A
Table 5. Marking codes
PMBT2222 *1B
PMBT2222A *1P
NXP Semiconductors PMBT2222; PMBT2222A
NPN switching transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter
PMBT2222 - 60 V
PMBT2222A - 75 V
VCEO collector-emitter voltage open base
PMBT2222 - 30 V
PMBT2222A - 40 V
VEBO emitter-base voltage open collector
PMBT2222 - 5 V
PMBT2222A - 6 V collector current - 600 mA
ICM peak collector current - 800 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb≤25°C [1] -250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 500 K/W
NXP Semiconductors PMBT2222; PMBT2222A
NPN switching transistors
7. Characteristics Table 8. Characteristics =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
PMBT2222 VCB =50V; IE =0A - - 10 nA
VCB =50V; IE =0A; = 125°C 10 μA
collector-base cut-off
current
PMBT2222A VCB =60V; IE =0A - - 10 nA
VCB =60V; IE =0A; = 125°C 10 μA
IEBO emitter-base cut-off
current
VEB =5V; IC =0A - - 10 nA
hFE DC current gain VCE =10V; =0.1 mA
VCE =10V; =1mA - -
VCE =10V; =10mA - -
VCE =10V; =10mA;
Tamb= −55°C - -
VCE =10V; = 150 mA
[1] 100 - 300
VCE =1V; = 150 mA
[1] 50 - - current gain VCE =10V; = 500 mA
[1]
PMBT2222 30 - -
PMBT2222A 40 - -
VCEsat collector-emitter
saturation voltage= 150 mA; =15mA
[1]
PMBT2222 - - 400 mV
PMBT2222A - - 300 mV
collector-emitter
saturation voltage= 500 mA; =50mA
[1]
PMBT2222 - - 1.6 V
PMBT2222A - - 1 V
NXP Semiconductors PMBT2222; PMBT2222A
NPN switching transistors
[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
VBEsat base-emitter saturation
voltage= 150 mA; =15mA
[1]
PMBT2222 - - 1.3 V
PMBT2222A 0.6 - 1.2 V
base-emitter saturation
voltage= 500 mA; =50mA
[1]
PMBT2222 - - 2.6 V
PMBT2222A - - 2 V collector capacitance VCB =10V; =ie =0A; 1MHz 8 pF emitter capacitance VEB =500 mV; =ic =0A; 1MHz
PMBT2222 - - 30 pF
PMBT2222A - - 25 pF transition frequency VCE =20V; =20mA; = 100 MHz
PMBT2222 250 - - MHz
PMBT2222A 300 - - MHz noise figure VCE =5V; = 100 μA; =1kΩ; 1kHz 4 dB delay time VCC =10V; = 150 mA;
IBon =15mA;
IBoff= −15 mA 15 ns rise time - - 20 ns
ton turn-on time - - 35 ns storage time - - 200 ns fall time - - 60 ns
toff turn-off time - - 250 ns
Table 8. Characteristics …continued =25 °C unless otherwise specified.
NXP Semiconductors PMBT2222; PMBT2222A
NPN switching transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

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