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Partno	Mfg	Dc	Qty	Available	Descript
PMBFJ308	PH	N/a	3000	avai	N-channel silicon FET
PMBFJ309	NXP	N/a	6000	avai	N-channel silicon field-effect transistors
PMBFJ310	NXP	N/a	6000	avai	N-channel silicon field-effect transistors

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PMBS3906 ,PNP general purpose transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
PMBS3906.215 , PNP general purpose transistor
PMBS3906.215 , PNP general purpose transistor
PST573C , SYSTEM RESET Monolithic IC
PST573F , SYSTEM RESET Monolithic IC
PST573G , SYSTEM RESET Monolithic IC
PST574D , System Reset
PST574G , System Reset
PST597 , System Reset

PMBFJ308-PMBFJ309-PMBFJ310
N-channel silicon FET
1. Product profile
1.1 General description
Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.
1.2 Features and benefits Low noise Interchangeability of drain and source connections High gain.
1.3 Applications AM input stage in car radios VHF amplifiers Oscillators and mixers.
1.4 Quick reference data
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
Rev. 4 — 20 September 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage - - 25 V
VGSoff gate-source cut-off voltage
PMBFJ308 VDS =10V; ID =1A 1- 6.5V
PMBFJ309 VDS =10V; ID =1A 1- 4V
PMBFJ310 VDS =10V; ID =1A 2- 6.5V
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
2. Pinning information
[1] Drain and source are interchangeable.
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
IDSS drain current
PMBFJ308 VGS =0V; VDS =10V 12 - 60 mA
PMBFJ309 VGS =0V; VDS =10V 12 - 30 mA
PMBFJ310 VGS =0V; VDS =10V 24 - 60 mA
Ptot total power dissipation up to Tamb =25C --250 mW
yfs forward transfer admittance VDS =10V; ID=10 mA 10 --mS
Table 1. Quick reference data …continued
Table 2. Discrete pinning[1]
Table 3. Ordering information
PMBFJ308 - plastic surface mounted package; 3 leads SOT23
PMBFJ309
PMBFJ310
Table 4. Marking
PMBFJ308 48*
PMBFJ309 49*
PMBFJ310 50*
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
5. Limiting values
6. Thermal characteristics
[1] Device mounted on an FR4 printed-circuit board.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 25 V
VGSO gate-source voltage open drain - 25 V
VGDO gate-drain voltage open source - 25 V forward gate current (DC) - 50 mA
Ptot total power dissipation up to Tamb =25 C - 250 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from junction to ambient [1] 500 K/W
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
7. Static characteristics
8. Dynamic characteristics
Table 7. Static characteristics =25 C; unless otherwise specified.
V(BR)GSS gate-source breakdown voltage IG=1 A; VDS =0V 25- - V
VGSoff gate-source cut-off voltage V
PMBFJ308 ID =1 A; VDS =10V 1- 6.5V
PMBFJ309 ID =1 A; VDS =10V 1- 4V
PMBFJ310 ID =1 A; VDS =10V 2- 6.5V
VGSS gate-source forward voltage IG =1mA; VDS =0V - - 1 V
IDSS drain-source leakage current
PMBFJ308 VGS =0V; VDS =10V 12 - 60 mA
PMBFJ309 VGS =0V; VDS =10V 12 - 30 mA
PMBFJ310 VGS =0V; VDS =10V 24 - 60 mA
IGSS gate-source leakage current VGS= 15 V; VDS =0V - - 1nA
RDSon drain-source on-state resistance VGS =0V; VDS =100 mV - 50 - 
yfs forward transfer admittance ID =10mA; VDS =10V 10 - - mS
yos common source output admittance ID =10mA; VDS =10V - - 250 S
Table 8. Dynamic characteristics
Tj = 25 C; unless otherwise specified.
Ciss input capacitance VDS =10V
VGS= 10 V; f=1 MHz - 3 5 pF
VGS =0V; Tamb =25 C- 6 - pF
Crss reverse transfer capacitance VDS =0V; VGS= 10 V; f=1 MHz - 1.3 2.5 pF
gis input conductance VDS =10V; ID =10mA= 100 MHz - 200 - S= 450 MHz -3 -mS
gfs transfer conductance VDS =10V; ID =10mA
f=100MHz - 13 - mS
f=450MHz - 12 - mS
grs reverse conductance VDS =10V; ID =10mA
f=100MHz - 30 - S
f=450MHz - 450- S
gos output conductance VDS =10V; ID =10mA= 100 MHz - 150 - S= 450 MHz - 400 - S equivalent input noise voltage VDS =10V; ID =10mA; f=100Hz - 6 - nV/Hz
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors

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