PMBFJ174 ,P-channel FET DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct ..
PMBFJ176 ,P-channel silicon field-effect transistorsDISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995 ..
PMBFJ176 ,P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct ..
PMBFJ177 ,P-channel silicon field-effect transistorsDISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995 ..
PMBFJ308 ,N-channel silicon FETApplications AM input stage in car radios VHF amplifiers Oscillators and mixers.1.4 Quick refere ..
PMBFJ309 ,N-channel silicon field-effect transistorsLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PST573C , SYSTEM RESET Monolithic IC
PST573F , SYSTEM RESET Monolithic IC
PST573G , SYSTEM RESET Monolithic IC
PST574D , System Reset
PST574G , System Reset
PST597 , System Reset
PMBFJ174-PMBFJ176
P-channel FET
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DESCRIPTIONSilicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
Note Drain and source are
interchangeable.
Marking codes: = drain = source gate
174: p6X
175: p6W
176: p6S
177: p6Y
QUICK REFERENCE DATADrain-source voltage VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate current IG max. 50 mA
Total power dissipation
up to Tamb =25 CPtot max. 300 mW
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
RATINGSLimiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS =25 C unless otherwise specified
Note Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm.
Drain-source voltage VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate-drain voltage VGDO max. 30 V
Gate current (d.c.) IG max. 50 mA
Total power dissipation
up to Tamb =25 C(1) Ptot max. 300 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tj max. 150 C
From junction to ambient in free air Rth j-a =430 K/W
Gate cut-off current
VGS =20 V; VDS =0 IGSS nA
Drain cut-off current
VDS= 15 V; VGS= 10 V IDSX nA
Drain currentVDS= 15 V; VGS =0 IDSS
Gate-source breakdown voltage =1 A; VDS =0 V(BR)GSSV
Gate-source cut-off voltageID= 10 nA; VDS= 15 V VGS off
Drain-source ON-resistance
VDS= 0.1 V; VGS =0 RDS on
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DYNAMIC CHARACTERISTICS =25 C unless otherwise specified
Input capacitance, f= 1 MHz
VGS =10 V; VDS =0 V Cis typ. 8 pF
VGS =VDS =0 Cis typ. 30 pF
Feedback capacitance, f= 1 MHz
VGS =10 V; VDS =0 V Crs typ. 4 pF
Switching times (see Fig.2 3)
Delay time td ns
Rise time tr ns
Turn-on time ton ns
Storage temperature ts ns
Fall time tf ns
Turn-off time toff ns
Test conditions: VDDV
VGS offV
VGS onV
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
NXP Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DATA SHEET STATUS
Notes Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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specification of the product as agreed between NXP
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agreement be valid in which the NXP Semiconductors
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those described in the Product data sheet.
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