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Partno	Mfg	Dc	Qty	Available	Descript
PMBFJ111	NXP/PHILIPS	N/a	9420	avai	N-channel FET
PMBFJ112	NXP	N/a	57000	avai	N-channel FET
PMBFJ113	NXP/PHILIPS	N/a	3000	avai	N-channel FET

PMBFJ112 ,N-channel FETFeatures and benefits High-speed switching Interchangeability of drain and source connections Lo ..
PMBFJ113 ,N-channel FETLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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PMBFJ176 ,P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct ..
PMBFJ177 ,P-channel silicon field-effect transistorsDISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995 ..
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PMBFJ111-PMBFJ112-PMBFJ113
N-channel FET
1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
1.2 Features and benefits High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30  for PMBFJ111).
1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids.
2. Pinning information
[1] Drain and source are interchangeable.
PMBFJ11 1; PMBFJ112;
PMBFJ113
N-channel junction FETs
Rev. 4 — 20 September 2011 Product data sheet
Table 1. Pinning
NXP Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5. Limiting values
[1] Mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.
6. Thermal characteristics
[1] Mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.
[2] Mounted on printed circuit board.
Table 2. Ordering information
PMBFJ111 - plastic surface mounted package; 3 leads SOT23
PMBFJ112
PMBFJ113
Table 3. Marking
PMBFJ111 41*
PMBFJ112 42*
PMBFJ113 47*
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 40 V
VGSO gate-source voltage - 40 V
VGDO gate-drain voltage - 40 V forward gate current (DC) - 50 mA
Ptot total power dissipation Tamb= 25 C [1] -300 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C
Table 5. Thermal characteristics = P (Rth(j-t) +Rth(t-s) +Rth(s-a))+Tamb.
Rth(j-a) thermal resistance from junction to ambient [1] 430 K/W
thermal resistance from junction to ambient [2] 500 K/W
NXP Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
7. Static characteristics
8. Dynamic characteristics
[1] Test conditions for switching times are as follows:
VDD =10 V, VGS=0Vto VGSoff (all types);
VGSoff= 12 V, RL = 750  (PMBFJ111);
VGSoff= 7 V, RL = 1550  (PMBFJ112);
VGSoff= 5 V, RL = 3150  (PMBFJ113).
Table 6. Static characteristics =25 C.
IGSS gate-source leakage current VGS= 15 V; VDS =0V - - 1nA
IDSS drain-source leakage current
PMBFJ111 VGS =0V; VDS= 15 V 20 --mA
PMBFJ112 VGS =0V; VDS= 15 V 5 --mA
PMBFJ113 VGS =0V; VDS= 15 V 2 --mA
V(BR)GSS gate-source breakdown voltage IG=1 A; VDS =0V 40 --V
VGSoff gate-source cut-off voltage
PMBFJ111 ID =1 A; VDS =5 V 10 - 3V
PMBFJ112 ID =1 A; VDS =5 V 5- 1V
PMBFJ113 ID =1 A; VDS =5 V 3- 0.5 V
RDSon drain-source on-state resistance
PMBFJ111 VGS =0 V; VDS= 0.1 V - - 30 
PMBFJ112 VGS =0 V; VDS= 0.1 V - - 50 
PMBFJ113 VGS =0 V; VDS= 0.1 V - - 100 
Table 7. Dynamic characteristics
Ciss input capacitance VDS =0V; VGS= 10 V; f=1 MHz -6 -pF
VDS =0V; VGS =0 V; f =1 MHz; Tamb =25C - 22 28 pF
Crss feedback capacitance - 3 - pF
Switching times; see Figure2 rise time [1] -6 -ns
ton turn-on time [1] -13 -ns fall time [1] -15 -ns
toff turn-off time [1] -35 -ns
NXP Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
NXP Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
9. Package outline
NXP Semiconductors PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
10. Revision history Table 8. Revision history
PMBFJ111_112_113 v.4 20110920 Product data sheet - PMBFJ111_112_113 v.3
Modifications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version.
PMBFJ111_112_113 v.3
(9397 750 13402)
20040804 Product data sheet - PMBFJ111_112_113_CNV v.2
PMBFJ111_112_113_CNV v.2 19971201 Product specification - -

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