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Partno	Mfg	Dc	Qty	Available	Descript
PMBFJ108	NXP	N/a	3000	avai	N-channel junction FETs
PMBFJ110	NXP	N/a	15000	avai	N-channel junction FETs

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PMBFJ108-PMBFJ110
N-channel FET
1. Product profile
1.1 General description
Symmetrical N-channel junction FETs in a SOT23 package.
1.2 Features and benefits High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (8  for PMBFJ108).
1.3 Applications Analog switches Choppers and commutators Audio amplifiers.
2. Pinning information
[1] Drain and source are interchangeable.
PMBFJ108; PMBFJ109;
PMBFJ110
N-channel junction FETs
Rev. 4 — 20 September 2011 Product data sheet
Table 1. Pinning
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5. Limiting values
[1] Mounted on an FR4 printed-circuit board.
6. Thermal characteristics
[1] Mounted on an FR4 printed-circuit board.
Table 2. Ordering information
PMBFJ108 - plastic surface mounted package; 3 leads SOT23
PMBFJ109
PMBFJ110
Table 3. Marking
PMBFJ108 38*
PMBFJ109 39*
PMBFJ110 40*
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) - 25 V
VGSO gate-source voltage - 25 V
VGDO gate-drain voltage - 25 V forward gate current (DC) - 50 mA
Ptot total power dissipation Tamb= 25 C [1] -250 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C
Table 5. Thermal characteristics
Rth(j-a) thermal resistance from junction to ambient [1] 500 K/W
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
7. Static characteristics
8. Dynamic characteristics
[1] Test conditions for switching times are as follows:
VDD=1.5 V, VGS =0VtoVGSoff (all types);
VGSoff= 12 V, RL= 100 (PMBFJ108);
VGSoff= 7V, RL =100 (PMBFJ109);
VGSoff= 5V, RL =100 (PMBFJ110).
Table 6. Static characteristics =25 C.
IGSS gate-source leakage current VGS= 15 V; VDS =0V - - 3nA
IDSX drain-source cut-off current VGS= 10 V; VDS =5V - - 3 nA
IDSS drain-source leakage current
PMBFJ108 VGS =0V; VDS=15V 80 --mA
PMBFJ109 VGS =0V; VDS=15V 40 --mA
PMBFJ110 VGS =0V; VDS=15V 10 --mA
V(BR)GSS gate-source breakdown voltage IG=1 A; VDS =0V - - 25 V
VGSoff gate-source cut-off voltage
PMBFJ108 ID =1 A; VDS =5V 10- 3V
PMBFJ109 ID =1 A; VDS =5V 6- 2V
PMBFJ110 ID =1 A; VDS =5V 4- 0.5V
RDSon drain-source on-state resistance
PMBFJ108 VGS =0V; VDS =0.1V - - 8 
PMBFJ109 VGS =0V; VDS =0.1V - - 12 
PMBFJ110 VGS =0V; VDS =0.1V - - 18 
Table 7. Dynamic characteristics
Tj = 25 C unless otherwise specified.
Ciss input capacitance VDS =0V; VGS= 10 V; f= 1 MHz - 15 30 pF
VDS =0V; VGS=0 V; f=1 MHz; Tamb =25C - 50 85 pF
Crss feedback capacitance VDS =0V; VGS= 10 V; f=1 MHz - 8 15 pF
Switching times (see Figure2) delay time [1] -2 - ns
ton turn-on time [1] -4 - ns storage time [1] -4 - ns
toff turn-off time [1] -6 - ns
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
9. Package outline
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110
N-channel junction FETs
10. Revision history Table 8. Revision history
PMBFJ108_109_110 v.4 20110920 Product data sheet - PMBFJ108_109_110 v.3
Modifications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version.
PMBFJ108_109_110 v.3
(9397 750 13401)
20040804 Product data sheet - PMBFJ108_109_110_CNV v.2
PMBFJ108_109_110_CNV v.2 19971201 Product specification - -

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