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PMBF4393
N-channel FETs
Philips Semiconductors Product specification
N-channel FETs PMBF4391;
PMBF4392; PMBF4393
DESCRIPTIONSymmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic
microminiature envelope intended for
application in thick and thin-film
circuits. The transistors are intended
for low-power chopper or switching
applications in industry.
PINNING
Note Drain and source are
interchangeable.
Marking code = drain = source = gate
PMBF4391= p6J
PMBF4392= p6K
PMBF4393= p6G
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
RATINGSLimiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
CHARACTERISTICS =25 °C unless otherwise specified
Drain-source voltage ± VDS max. 40V
Drain-gate voltage VDGO max. 40V
Gate-source voltage −VGSO max. 40V
Gate current (DC) IG max. 50 mA
Total power dissipation up to Tamb =40°C(1) Ptot max. 250 mW
Storage temperature range Tstg −65 to+ 150 °C
Junction temperature Tj max. 150 °C
From junction to ambient(1) Rth j-a = 430 K/W
Gate-source voltage= 1 mA; VDS = 0 VGSon < 1V
Gate-source cut-off current
VDS= 0 V; −VGS= 20 V −IGSS < 0.1 nA
VDS= 0 V; −VGS= 20 V; Tamb= 150°C −IGSS < 0.2 μA
Drain current
VDS = 20 V; VGS =0 IDSS
Gate-source breakdown voltage
−IG =1 μA; VDS =0 −V(BR)GSS
Gate-source cut-off voltage= 1 nA; VDS = 20 V −V(P)GS
Drain-source voltage (on)= 12 mA; VGS =0 VDSon= 6 mA; VGS =0 VDSon= 3 mA; VGS =0 VDSon
Drain-source resistance (on)= 0; VGS= 0; f = 1 kHz; Tamb =25 °Crds on
Drain cut-off current
−VGS= 12 V
VDS = 20 V
IDSX
−VGS =7 V IDSX
−VGS =5 V IDSX
−VGS= 12 V
VDS = 20 V; Tamb= 150°C
IDSX
−VGS =7 V IDSX
−VGS =5 V IDSX
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
Note Mounted on a ceramic substrate of 8 mm× 10 mm× 0,7 mm.
y-parameters (common source)VDS= 20 V; VGS= 0; f = 1 MHz; Tamb =25°C
Input capacitance Cis
Feedback capacitance
−VGS= 12 V ; VDS =0 Crs
−VGS =7 V ; VDS =0 Crs
−VGS =5 V ; VDS =0 Crs
Switching times
VDD= 10 V ; VDS =0
Conditions ID and −VGSoff ID
−VGS off
Rise time tr
Turn on time ton
Fall time tf
Turn off time toff
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
Pulse generator: < 0.5 ns < 0.5 ns = 100 μs = 0.01
Oscilloscope: =50Ω
Philips Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
