PMBF4391 ,N-channel FETapplications in industry. dgsPINNING121 = drainTop view MAM3852 = source3= gateNote1. Drain and sou ..
PMBF4392 ,N-channel FETs DISCRETE SEMICONDUCTORS DATA SHEETPMBF4391; PMBF4392; PMBF4393N-channel FETsProduct specification ..
PMBF4393 ,N-channel FETsapplications in industry.gsPINNING121 = drain Top view MAM3852 = source3 = gateNote1. Drain and sou ..
PMBF4393 ,N-channel FETsapplications in industry. dgsPINNING121 = drainTop view MAM3852 = source3= gateNote1. Drain and sou ..
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PMBF4391-PMBF4392-PMBF4393
N-channel FET
NXP Semiconductors Product specification
N-channel FETs PMBF4391;
PMBF4392; PMBF4393
DESCRIPTIONSymmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for low-power
chopper or switching applications in
industry.
PINNING
Note Drain and source are
interchangeable.
Marking code = drain = source gate
PMBF4391= p6J
PMBF4392= p6K
PMBF4393= p6G
QUICK REFERENCE DATA
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
RATINGSLimiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
CHARACTERISTICS =25 C unless otherwise specified
Drain-source voltage VDS max. 40V
Drain-gate voltage VDGO max. 40V
Gate-source voltage VGSO max. 40V
Gate current (DC) IG max. 50 mA
Total power dissipation up to Tamb =40 C (1) Ptot max. 250 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tj max. 150 C
From junction to ambient(1) Rth j-a =430 K/W
Gate-source voltage= 1 mA; VDS = 0 VGSon 1V
Gate-source cut-off current
VDS =0 V; VGS =20 V IGSS 0.1 nA
VDS =0 V; VGS =20 V; Tamb =150 C IGSS 0.2 A
Drain current
VDS = 20 V; VGS =0
IDSS
Gate-source breakdown voltage
IG =1 A; VDS =0 V(BR)GSS
Gate-source cut-off voltage= 1 nA; VDS = 20 V
V(P)GS
Drain-source voltage (on) =12 mA; VGS =0 VDSon= 6 mA; VGS =0 VDSon= 3 mA; VGS =0 VDSon
Drain-source resistance (on) =0; VGS= 0; f = 1 kHz; Tamb =25 Crds on
Drain cut-off current
VGS =12 V VDS = 20 V IDSX
VGS =7 V IDSX
VGS =5 V IDSX
VGS =12 V VDS = 20 V; Tamb= 150 CIDSX
VGS =7 V IDSX
VGS =5 V IDSX
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
Note Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
y-parameters (common source)VDS =20 V; VGS= 0; f = 1 MHz; Tamb =25 C
Input capacitance Cis
Feedback capacitance
VGS =12 V ; VDS =0 Crs
VGS =7 V ; VDS =0 Crs
VGS =5 V ; VDS =0 Crs
Switching times
VDD =10 V ; VDS =0
Conditions ID and VGSoff ID
VGS off
Rise time tr
Turn on time ton
Fall time tf
Turn off time toff
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
Pulse generator: 0.5 ns 0.5 ns =100 s =0.01
Oscilloscope: =50
NXP Semiconductors Product specification
N-channel FETs PMBF4391; PMBF4392;
PMBF4393
