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PMBD7000
Double high-speed switching diode
1. Product profile
1.1 General descriptionThe PMBD7000 consists of two high-speed switching diodes connected in series,
fabricated in planar technology, and encapsulated in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
1.3 Applications High-speed switching General-purpose switching
1.4 Quick reference data[1] When switched from IF=10 mA to IR =10mA; RL= 100 Ω; measured at IR =1mA.
PMBD7000
Double high-speed switching diode
Rev. 4 — 16 September 2010 Product data sheet High switching speed: trr≤ 4ns Reverse voltage: VR≤ 100V Repetitive peak forward current:
IFRM≤ 450 mA Repetitive peak reverse voltage:
VRRM≤ 100V Small SMD plastic package AEC-Q101 qualified
Table 1. Quick reference data
Per diode reverse current VR= 100V - - 0.5 μA reverse voltage - - 100 V
trr reverse recovery time [1] -- 4 ns
NXP Semiconductors PMBD7000
Double high-speed switching diode
2. Pinning information
3. Ordering information
4. Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning anode (diode1) cathode (diode2) cathode (diode 1),
anode (diode2) 12
Table 3. Ordering informationPMBD7000 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesPMBD7000 *5C
NXP Semiconductors PMBD7000
Double high-speed switching diode
5. Limiting values[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj =25 °C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodeVRRM repetitive peak reverse
voltage
-100 V reverse voltage - 100 V forward current [1] -215 mA
[2] -125 mA
IFRM repetitive peak forward
current
-450 mA
IFSM non-repetitive peak
forward current
square wave [3] =1 μs- 4 A =1ms - 1 A =1s - 0.5 A
Ptot total power dissipation Tamb≤25°C [1][4] -250 mW
Per device junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2]- - 500 K/W
Rth(j-t) thermal resistance from
junction to tie-point - 360 K/W
NXP Semiconductors PMBD7000
Double high-speed switching diode
7. Characteristics[1] When switched from IF=10 mA to IR =10mA; RL= 100 Ω; measured at IR =1mA.
[2] When switched from IF =10mA; tr =20ns.
Table 7. Characteristics =25 °C unless otherwise specified.
Per diode forward voltage IF=1 mA - 550 700 mV=10 mA - 670 820 mV=50 mA --1 V= 100 mA - 0.75 1.1 V= 150 mA --1.25 V reverse current VR=50V - - 300 nA= 100V - - 500 nA =50V; Tj =150°C - - 100 μA diode capacitance f=1 MHz; VR=0V --1.5 pF
trr reverse recovery time [1] --4 ns
VFR forward recovery voltage [2] --1.75 V
NXP Semiconductors PMBD7000
Double high-speed switching diode
NXP Semiconductors PMBD7000
Double high-speed switching diode
8. Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
