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Partno	Mfg	Dc	Qty	Available	Descript
PIMZ2	NXP/PHILIPS	N/a	3000	avai	NPN/PNP general-purpose double transistors

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PRA ,High Precision Resistor Arrays, Very Short Deliveries Even on Special Orders, High Stability Passivated Nichrome Resistive Layer, Ratio Tolerance to 0.01%, Pre-Tinned or Gold Terminations over Nickel Barrier FEATURESResistance values can be different on a given networkNoise : ≤ - 35 dB(R max. /R min. as h ..

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PIMZ2
NPN/PNP general-purpose double transistors
Product profile1.1 General description
NPN/PNP general-purpose double transistors.
1.2 Features Simplified circuit design Reduced component count Reduced pick and place costs
1.3 Applications General-purpose switching and amplification
1.4 Quick reference data
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
Rev. 06 — 17 November 2009 Product data sheet
Table 1. Product overview
PIMZ2 SOT457 SC-74 NPN/PNP double transistors
PUMZ2 SOT363 SC-88 NPN/PNP double transistors
Table 2. Quick reference data
VCEO collector-emitter voltage open base - - 50 V collector current (DC) - - 150 mA
NXP Semiconductors PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
PIMZ2 (SOT457) collector TR2
2emitter TR2 collector TR1
4emitter TR1 base TR1 base TR2
PUMZ2 (SOT363)
1emitter TR1 base TR1 base TR2 collector TR2
5emitter TR2 collector TR1
Table 4. Ordering information
PIMZ2 SC-74 plastic surface mounted package; 6 leads SOT457
PUMZ2 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5. Marking codes
PIMZ2 M6
PUMZ2 GZ*
NXP Semiconductors PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors Limiting values
[1] Device mounted on an FR4 printed-circuit board. Thermal characteristics
[1] Device mounted on an FR4 printed-circuit board.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 7 V collector current (DC) - 150 mA
ICM peak collector current - 200 mA
IBM peak base current - 100 mA
Ptot total power dissipation Tamb≤25°C
SOT457 [1] -200 mW
SOT363 [1] -180 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb≤25°C
SOT457 [1] -300 mW
SOT363 [1] -300 mW
Table 7. Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
Tamb≤25°C
SOT457 [1] --625 K/W
SOT363 [1] --694 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
Tamb≤25°C
SOT457 [1] --417 K/W
SOT363 [1] --417 K/W
NXP Semiconductors PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors CharacteristicsTable 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Per transistor; for the PNP transistor with negative polarity; unless otherwise specified
ICBO collector-base cut-off current VCB =60V; IE =0 A - - 100 nA
VCB =60V; IE =0 A; Tj= 150 °C- - 50 μA
IEBO emitter-base cut-off current VEB =7V; IC =0 A - - 100 nA
hFE DC current gain VCE =6V; IC=1 mA 120 250 560
TR1 (PNP)
VCEsat collector-emitter saturation
voltage= −50 mA; IB= −5mA - - −500 mV transition frequency IE= −2mA; VCE= −12 V; f= 100 MHz - 190 - MHz collector capacitance IE =ie =0 A; VCB= −12 V; f=1 MHz - 2.3 5 pF
TR2 (NPN)
VCEsat collector-emitter saturation
voltage =50mA; IB =5mA - - 250 mV transition frequency IE =2 mA; VCE=12 V; f= 100 MHz 100 - - MHz collector capacitance IE =ie =0 A; VCB =12V; f=1MHz - - 3 pF
NXP Semiconductors PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors Package outline
NXP Semiconductors PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
Fig 2. Package outline SOT363 (SC-88)

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