PHT4NQ10LT ,N-channel enhancement mode field-effect transistorPHT4NQ10LTN-channel enhancement mode field-effect transistorRev. 01 — 11 September 2000 Product spec ..
PHT4NQ10T ,N-channel TrenchMOS standard level FETPHT4NQ10TTrenchMOS™ standard level FETRev. 02 — 2 May 2002 Product dataM3D0871. DescriptionN-channe ..
PHT6N03T ,TrenchMOS transistor Standard level FET
PHT6N03T ,TrenchMOS transistor Standard level FET
PHT6N06 ,TrenchMOS transistor Standard level FETLIMITING VALUES AND CHARACTERISTICST = -55 to 175˚C unless otherwise specifiedjSYMBOL PARAMETER CON ..
PHT6N06 ,TrenchMOS transistor Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic ..
PLS173A ,Programmable logic array 22 ?42 ?10
PLS173A ,Programmable logic array 22 ?42 ?10
PLSI1032-80LJ , High-Density Programmable Logic
PLSI1032-90LJ , High-Density Programmable Logic
PLSI1032-90LJ , High-Density Programmable Logic
PLT101 ,Transmitter module.{‘m‘m
4 -
N E C ELECTRONICS INC 30E 1) " 13427535 C1l3ii!n8S'1 T " C-"ll-ert.
1:43-97- //
..
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
PHT4NQ10LTN-channel enhancement mode field-effect transistor
Rev. 01 — 11 September 2000 Product specificationM3D087
DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHT4NQ10LT in SOT223.
Features TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level compatible.
Applications Primary side switch in DC to DC convertors High speed driver Fast general purpose switch.
Pinning information TrenchMOS is a trademark of Royal Philips Electronics
Table 1: Pinning - SOT223, simplified outline and symbol gate (g)
SOT223 drain (d) source (s) drain (d)
MSB002 - 1Top view s
MBB076
Philips Semiconductors PHT4NQ10LT
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25to150°C − 100 V drain current (DC) Tsp =25 °C; VGS =5V − 3.5 A
Ptot total power dissipation Tsp =25°C − 6.9 W junction temperature − 150 °C
RDSon drain-source on-state resistance VGS =5V; ID= 1.75A 200 250 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C − 100 V
VDGR drain-gate voltage (DC) Tj =25to150 °C; RGS =20kΩ− 100 V
VGS gate-source voltage (DC) −±16 V drain current (DC) Tsp =25 °C; VGS =5V; Figure2 and3 − 3.5 A
Tsp= 100 °C; VGS =5V; − 2.2 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 − 14 A
Ptot total power dissipation Tsp =25 °C; Figure1 − 6.9 W
Tstg storage temperature −65 +150 °C operating junction temperature −65 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C − 3.5 A
ISM peak source (diode forward) current Tsp =25 °C; tp≤10μs − 14 A
Avalanche ruggednessEAS non-repetitive avalanche energy unclamped inductive load; ID= 3.5A;= 0.2 ms; VDD≤15 V; RGS =50Ω;
VGS=5 V; starting Tj =25 °C; Figure4 45 mJ
IAS non-repetitive avalanche current unclamped inductive load; VDD≤15V;
RGS =50 Ω; VGS =5V; Figure4 3.5 A
Philips Semiconductors PHT4NQ10LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors PHT4NQ10LT
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure5 18 K/W
Rth(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board;
minimum footprint
150 K/W
Philips Semiconductors PHT4NQ10LT
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS =0V =25°C 100 130 − V= −55 °C89 −− V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure10 =25 °C1 − 2V= 150°C 0.6 −− V= −55°C −− 2.3 V
IDSS drain-source leakage current VDS= 100 V; VGS =0V =25°C − 125 μA= 150°C − 4 250 μA
IGSS gate-source leakage current VGS= ±10 V; VDS =0V − 10 100 nA
RDSon drain-source on-state resistance VGS =5V; ID= 1.75A; Figure8 and9 =25°C − 200 250 mΩ= 150°C −− 575 mΩ
Dynamic characteristicsgfs forward transconductance VDS =5V; ID= 3.5A; Figure12 − 8.5 − S
Qg(tot) total gate charge ID= 3.5 A; VDS =80V; VGS =5V; Figure15 − 12.2 − nC
Qgs gate-source charge − 1.1 − nC
Qgd gate-drain (Miller) charge − 3.6 − nC
Ciss input capacitance VGS =0V; VDS=25 V; f=1 MHz; Figure13 − 374 − pF
Coss output capacitance − 45 − pF
Crss reverse transfer capacitance − 24 − pF
td(on) turn-on delay time VDD =50V; RD =15 Ω; VGS =5V; RG =6 Ω− 4 − ns turn-on rise time − 10 − ns
td(off) turn-off delay time − 52 − ns turn-off fall time − 21 − ns
Source-drain diodeVSD source-drain (diode forward) voltageIS= 3.5 A; VGS =0V; Figure14 − 0.87 1.5 V
trr reverse recovery time IS= 3.5 A; dIS/dt= −100 A/μs;
VGS =0V; VDS =30V 50 − ns recovered charge − 100 − nC
Philips Semiconductors PHT4NQ10LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors PHT4NQ10LT
N-channel enhancement mode field-effect transistor
