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PHT4NQ10LT from PHI,Philips

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PHT4NQ10LT

Manufacturer: PHI

N-channel enhancement mode field-effect transistor

Partnumber Manufacturer Quantity Availability
PHT4NQ10LT PHI 3859 In Stock

Description and Introduction

N-channel enhancement mode field-effect transistor # Introduction to the PHT4NQ10LT Electronic Component  

The PHT4NQ10LT is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With its low on-resistance and high switching speed, this component is well-suited for power conversion, motor control, and load switching circuits.  

Featuring a compact and robust package, the PHT4NQ10LT ensures reliable operation under demanding conditions while minimizing power losses. Its optimized gate charge and threshold voltage make it an excellent choice for both low-voltage and high-frequency applications.  

Key specifications include a drain-source voltage rating of 100V, a continuous drain current capability, and enhanced thermal performance, ensuring stability in high-power environments. The device also incorporates advanced protection features to safeguard against overcurrent and overheating.  

Engineers and designers often select the PHT4NQ10LT for its balance of efficiency, durability, and cost-effectiveness. Whether used in industrial automation, consumer electronics, or automotive systems, this MOSFET delivers consistent performance and energy savings.  

By integrating the PHT4NQ10LT into circuit designs, developers can achieve improved power efficiency and extended operational life in their electronic systems.

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